Journal of Power Electronics

  • 제24권6호
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  • Pages.887-896
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  • 2024
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  • 1598-2092(pISSN)
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  • 2093-4718(eISSN)
전력전자학회 (The Korean Institute of Power Electronics)
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Thermally compensated discontinuous modulation strategy influence on DC-link capacitor current of CHB converters

  • Damilola Agnes Ojo (Department of Electrical Engineering, Pukyong National University) ;
  • Youngjong Ko (Department of Electrical Engineering and Industrial 4.0 Convergence Bionics Engineering, Pukyong National University)
  • 투고 : 2024.01.25
  • 심사 : 2024.04.23
  • 발행 : 2024.06.20
⟨ 이전 논문 다음 논문 ⟩

초록

CHB converters have been intensively considered for various applications. However, a reliability issue has emerged due to the higher number of power devices, particularly power semiconductor devices and capacitors, which have been identified as major sources of failure. Although continuous efforts have been made to enhance the reliability of power semiconductors through methods such as active thermal control, there is a noticeable absence of discussion regarding the reliability of capacitors. This is significant since capacitors are the components most prone to failure in power converters. In this study, the root mean square (RMS) current of the DC-link capacitor in a CHB converter is derived when applying thermally compensated discontinuous modulation for power semiconductors. To validate the obtained findings, the derived equations are experimentally tested using a proof-of-concept setup.

키워드

과제정보

This work was supported by a Research Grant of Pukyong National University(2022).

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