Current Photovoltaic Research

  • 제12권2호
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  • Pages.31-36
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  • 2024
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  • 2288-3274(pISSN)
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  • 2508-125X(eISSN)
한국태양광발전학회 (Korea Photovoltaic Society)
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고품질 polysilicon/tunneling oxide 기반의 에미터 형성 공정에서의 Auger 재결합 조절 연구

Study on Auger Recombination Control using Barrier SiO2 in High-Quality Polysilicon/Tunneling oxide based Emitter Formation

  • 이희연 (신소재공학과, 고려대학교) ;
  • 홍수범 (에너지지스템공학과, 고려대학교) ;
  • 김동환 (신소재공학과, 고려대학교)
  • Huiyeon Lee (Department of Materials Science and Engineering, Korea University) ;
  • SuBeom Hong (Green School Graduate School of Energy and Environment (KU-KIST), Korea University) ;
  • Donghwan Kim (Department of Materials Science and Engineering, Korea University)
  • 투고 : 2024.03.12
  • 심사 : 2024.06.18
  • 발행 : 2024.06.30
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초록

Passivating contacts are a promising technology for achieving high efficiency Si solar cells by reducing direct metal/Si contact. Among them, a polysilicon (poly-Si) based passivating contact solar cells achieve high passivation quality through a tunnel oxide (SiOx) and poly-Si. In poly-Si/SiOx based solar cells, the passivation quality depends on the amount of dopant in-diffused into the bulk-Si. Therefore, our study fabricated cells by inserting silicon oxide (SiO2) as a doping barrier before doping and analyzed the barrier effect of SiO2. In the experiments, p+ poly-Si was formed using spin on dopant (SOD) method, and samples ware fabricated by controlling formation conditions such as existence of doping barrier and poly-Si thickness. Completed samples were measured using quasi steady state photoconductance (QSSPC). Based on these results, it was confirmed that possibility of achieving high Voc by inserting a doping barrier even with thin poly-Si. In conclusion, an improvement in implied Voc of up to approximately 20 mV was achieved compared to results with thicker poly-Si results.

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참고문헌

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