Acknowledgement
This work was supported in part by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (2022M3F3A2A01072855, 2021M3C1C3097674 and RS-2022-00144419).
References
- D. Shin, C.H. Kim, P. Park, I. Kwon, Influence and analysis of a commercial ZigBee module induced by gamma rays, Nucl. Eng. Technol. 53 (5) (2021) 1483-1490, https://doi.org/10.1016/j.net.2020.11.017.
- O. Ridge, U.S.N.R. Commission, Assessment of Wireless Technologies and Their Application at Nuclear Facilities Assessment of Wireless Technologies and Their Application at Nuclear Facilities, 2004.
- C. Lee, G. Cho, T. Unruh, S. Hur, I. Kwon, Integrated circuit design for radiation-hardened charge-sensitive amplifier survived up to 2 MRAD, Sensors 20 (10) (2020), https://doi.org/10.3390/s20102765.
- M. Kumar, J.S. Ubhi, S. Basra, A. Chawla, H.S. Jatana, Total ionizing dose hardness analysis of transistors in commercial 180 nm CMOS technology, Microelectron. J. 115 (2021), https://doi.org/10.1016/j.mejo.2021.105182.
- M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, A. Candelori, Comparison of ionizing radiation effects in 0.18 and 0.25 ㎛ CMOS technologies for analog applications, IEEE Trans. Nucl. Sci. 50 (2003) 1827-1833, https://doi.org/10.1109/TNS.2003.820767.
- J.R. Schwank, M.R. Shaneyfelt, D.M. Fleetwood, J.A. Felix, P.E. Dodd, P. Paillet, V. Ferlet-Cavrois, Radiation effects in MOS oxides, IEEE Trans. Nucl. Sci. 55 (4) (2008) 1833-1853, https://doi.org/10.1109/TNS.2008.2001040.
- D.M. Fleetwood, Total ionizing dose effects in MOS and low-dose-rate-sensitive linear-bipolar devices, IEEE Trans. Nucl. Sci. 60 (3) (2013) 1706-1730, https://doi.org/10.1109/TNS.2013.2259260.
- D.J. Allstot, X. Li, S. Shekhar, Design Considerations for CMOS Low-Noise Amplifiers, 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Systems, Digest of Papers, Forth Worth, TX, USA, 2004, pp. 97-100, https://doi.org/10.1109/RFIC.2004.1320538.
- G. Boeck, Design of RF-CMOS Integrated Circuits for Wireless Communications, 2008 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, Tel-Aviv, Israel, 2008, pp. 1-6, https://doi.org/10.1109/COMCAS.2008.4562799.
- M. Jhabvala, Radiation hardened PMOS process with ion implanted threshold adjust, IEEE Trans. Nucl. Sci. 26 (1) (1979) 971-975, https://doi.org/10.1109/TNS.1979.4329753.
- Y. Cao, P. Leroux, M. Steyaert, Radiation-tolerant delta-sigma time-to-digital converters, in: Analog Circuits and Signal Processing, Springer, Cham, 2015.
- M. Manghisoni, L. Ratti, G. Traversi, Radiation effects on the noise parameters of a 0.18 ㎛ CMOS technology for detector front-end applications, Nucl. Phys. B 125 (2003) 4-5, https://doi.org/10.1016/SO920-5632(03)02280-l.
- J.D. Cressler, H.A. Mantooth, Extreme Environment Electronics, CRC Press, 2012.
- M. Cardenas-Juarez, M.A. Diaz-Ibarra, U. Pineda-Rico, A. Arce, E. Stevens-Navarro, On Spectrum Occupancy Measurements at 2.4 GHz ISM Band for Cognitive Radio Applications, 2016 International Conference on Electronics, Communications and Computers (CONIELECOMP), Cholula, Mexico, 2016, pp. 25-31, https://doi.org/10.1109/CONIELECOMP.2016.7438547.
- Q. Kalhoro, M.A. Kalhoro, S. Abbasi, K. Khoumabti, Analysis of Femtocells Deployment with Different Air-Interfaces. UKSim2010 - UKSim 12th International Conference on Computer Modelling and Simulation, 2010, pp. 439-443, https://doi.org/10.1109/UKSIM.2010.87.
- S. Park, W. Kim, Design of a 1.8 GHz low noise amplifier for RF front-end in a 0.8 ㎛ CMOS technology, IEEE Trans. Consum. Electron. 47 (1) (2001).
- A.A. Roberts, D.G.N. Rani, S. Rajaram, Design and optimization of feedforward noise cancelling complementary metal oxide semiconductor LNA for 2.4 GHz WLAN applications, Inst. Eng. Technol. 13 (6) (2019) 908-919. https://doi.org/10.1049/iet-cds.2018.5291
- M. Bozanic, S. Sinha, Milimeter-Wave Low Noise Amplifiers, Springer, Cham, 2018.
- C.H. Chang, M. Onabajo, Analysis and demonstration of an IIP3 improvement technique for low-power RF low-noise amplifiers, IEEE Trans. Circ. Syst.: Regul. Pap. 65 (3) (2018) 859-896, https://doi.org/10.1109/TCSI.2017.2781369.
- T. Riad, Q. Jing, A Nonlinear S-Parameters Behavioural Model for RF LNAs, 2nd Asia Symposium on Quality Electronic Design, ASQED), 2010, pp. 106-111, https://doi.org/10.1109/ASQED.2010.5548227.
- H.S. Nalwa, Silicon-Based Materials and Devices, Two-Volume Set: Materials and Processing, Properties and Devices, first ed., ACADEMIC PRESS, Cambridge, MA, USA, 2001.
- V. Re, M. Manghisoni, L. Ratti, V. Speziali, G. Traversi, Total ionizing dose effects on the noise performances of a 0.13 ㎛ CMOS technology, IEEE Trans. Nucl. Sci. 53 (2006) 1599-1606. https://doi.org/10.1109/TNS.2006.871802
- Z.E. Fleetwood, E.W. Kenyon, N.E. Lourenco, S. Jain, E.X. Zhang, T.D. England, J. D. Cressler, R.D. Schrimpf, D.M. Fleetwood, Advanced SiGe BiCMOS technology for multi-Mrad electronic systems, IEEE Trans. Device Mater. Reliab. 14 (2014) 844-848. https://doi.org/10.1109/TDMR.2014.2331980
- H.J. Barnaby, Total ionizing dose effects in modern CMOS technologies, IEEE Trans. Nucl. Sci. 53 (6) (2006) 3103-3121, https://doi.org/10.1109/tns.2006.885952.
- L. Yang, D. Li, X. Yang, X. Feng, L. Tan, C. Shen, H. Cai, A temperature-insensitive process corner detection circuit based on self-timing ring oscillator, Microelectron. Reliab. 138 (2022), https://doi.org/10.1016/j.microrel.2022.114779.
- M. Huff, Microsystems manufacturing methods: integrated circuit processing steps, in: Process Variations in Microsystems Manufacturing, Microsystems and Nanosystems, Springer, Cham., 2020, pp. 45-97, https://doi.org/10.1007/978-3-030-40560-1_3.