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반도체 CMP 용 세리아 슬러리의 AMP 함량에 따른 분산안정성에 관한 연구

Study on dispersion stability according to AMP content of CMP ceria slurry for semiconductor

  • Sohee Hwang (Department of Chemistry, Hannam University) ;
  • JinA Lim (Department of Chemistry, Hannam University) ;
  • Woonjung Kim (Department of Chemistry, Hannam University)
  • 투고 : 2024.01.17
  • 심사 : 2024.04.22
  • 발행 : 2024.04.30

초록

반도체 소자의 집적도는 높아져 왔으며 이는 더 작고 밀도가 높은 회로 및 소자를 제조하는 것을 의미한다. 이에 따라 다양한 층간 표면을 매끄럽게 유지하여 미세한 패턴을 형성하고 고밀도 회로를 안정적으로 제작하는데 평탄화 기술이 중요한 역할을 한다. 결과적으로 반도체에서의 CMP(chemical mechanical polishing) 공정은 다층 구조 소자를 만들기 위해서 반드시 필요한 공정이 되었다. 일반적으로 CMP 공정의 슬러리 조성은 세리아(ceria), 분산제(dispersant), 물(DI water) 이렇게 3 가지 성분이 균형을 이루는 것이 중요하다. 본 연구에서는 AMP(2-Amino-2-methyle-1-propanol) 함량을 달리한 양쪽성 계면활성제를 사용한 세리아 슬러리 안정성 연구를 수행하였다. 결과적으로 AMP 함량에 따라 카복실기(-COOH) 영향으로 pH 안정화 되었으며, 세리아 슬러리 응집현상이 발생하지 않았으며 분산 안정성 문제가 없는 것으로 확인되었다.

CMP (Chemical Mechanical Polishing) processes have become essential for creating multilayered component structures in semiconductor manufacturing. Typically, the slurry composition in CMP processes involves a balance of three components such as ceria, dispersant, and deionized water. In this study, we conducted research on the stability of ceria slurries using an amphoteric surfactant with controlled concentrations of AMP (2-Amino-2-methyl-1-propanol). The results indicated pH stabilization influenced by carboxylic (-COOH) groups depending on the AMP concentration. Additionally, there was no occurrence of aggregation in the ceria slurry, confirming the absence of dispersion stability issues.

키워드

과제정보

This work was supported by the "Leaders in Industry-university Cooperation 3.0" Project and the National Research Foundation of Korea(NRF) grant funded by the Korea government(MSIT) (RS-2023-00281517). Also, this work was supported by the Regional Specialized Industry Development Plus Program(S3367957) and the Development of new products subject to purchase conditions(S3233769) funded by the Ministry of SMEs and Startups(MSS, Korea).

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