Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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A study on the growth morphology of AlN single crystal according to the change in temperature using HVPE method

HVPE(Hydride Vapor Phase Epitaxy) 법을 적용한 온도 변화에 따른 AlN 단 결정의 성장 형상에 관한 연구

  • Received : 2024.02.06
  • Accepted : 2024.02.16
  • Published : 2024.02.29
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Abstract

As interest in power semiconductors is growing recently, research on device design and application using light energy gap materials such as SiC and GaN is being actively conducted. Because AlN single crystals have a larger energy gap than the above mentioned materials, research on high-power devices is also in progress, but commercialized wafers have not yet been reported, so research is needed. In this study, we applied the HVPE (Hydride vapor phase epitaxy) method to produce AlN single crystals and attempted to obtain bulk single crystals using our own manufacturing equipment. To this end, we would like to report the results of securing the growth conditions for single crystals. we would like to report on the change in the shape of the grown crystal according to the change in temperature.

최근 전력반도체에 대한 관심이 확대되고 있는 가운데, SiC와 GaN 등의 광에너지갭 소재에 의한 소자화 및 응용에 대한 연구가 수행되고 있다. AlN 단결정은 이들 보다 더 큰 에너지갭을 갖기 때문에 대전력 소자화에 대한 연구도 진행중에 있으나, 상용화된 웨이퍼는 아직 보고되고 있지 않아 이에 대한 연구가 필요하다. 본 연구에서는 AlN 단결정을 제조하기 위하여 HVPE(Hydride vapor phase epitaxy) 법을 적용하였고, 자체 제작 설비를 이용하여, 벌크 단결정을 얻어내고자 하였으며, 이를 위해 단결정의 성장 조건을 확보하고자 한 결과를 보고하고자 하며, 온도의 변화에 따라 성장된 결정의 형상의 변화에 대하여 보고하고자 한다.

Keywords

Acknowledgement

본 연구는 산업통상자원부에서 실시하는 우수기업연구소육성사업(ATC+)으로 진행되었으며 이에 감사드립니다(과제번호: 20018017).

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