과제정보
본 논문은 산업통상자원부의 재원으로 산업기술평가관리원(KEIT)[과제번호: RS-2022-00143570, 2kV급 수직형 GaN 전력소자용 에피 및 소자 핵심원천 기술개발] 지원을 받아 수행된 연구임.
참고문헌
- 외교부, "2030 국가 온실가스 감축목표(NDC)," 2021.
- https://www.energy.gov/
- 국제에너지기구(IEA), "2021년 세계 전기차 시장 전망 보고서," 2021, https://www.iea.org/reports/global-evoutlook-2021
- Yole Development, "Power electronics for electric & hybrid electric vehicles 2020," 2020.
- T. Bieniek, "REACTION project as a driver for key european SiC technologies focused on power electronics development," Tech-connect Briefs 2019, 2019, pp. 256-259.
- W. Utsumi et al., "Congruent melting of gallium nitride at 6 GPa and its application to single crystal growth," Nature Mater., vol. 2, 2003, pp. 735-738. https://doi.org/10.1038/nmat1003
- I.C. Kizilyalli et al., "Reliability studies of vertical GaN devices based on bulk GaN substrates," Microelectronics Reliability, vol. 55, no. 9-10, 2015, pp. 1654-1661. https://doi.org/10.1016/j.microrel.2015.07.012
- R. Dwilinski, "GaN synthesis by ammonothermal method," Acta Physica Polonica A, vol. 88, 1995, pp. 833-836. https://doi.org/10.12693/APhysPolA.88.833
- D. Ehrentraut et al., "High quality, low cost ammonothermal bulk GaN substrate," Jpn. J. Appl. Phys., vol. 52, no. 8S, 2013.
- HTTP://www.ammono.com/images/Articles/Ammono_progress.pdf
- 한국화학연구원, "조명기기 LED용 GaN 단결정 기술개발," 최종 연구보고서(산업통상부), 2014. 3.
- HTTP://commons.wikimedia.org/wiki/File:SchemaHVPE-Reaktor_de.png
- 이혜용, "질화갈륨 단결정 성장 기술 개발현황," 세라미스트, vol. 14, no. 5, 2011, pp. 35-42.
- H. Amano et al., "The 2018 GaN power electronics roadmap," J. Phys. D: Appl. Phys., vol. 51, 2018, article no. 163001.
- I. C. Kizilyalli et al., "3.7 kV vertical GaN PN diodes," IEEE Electron Device Lett., vol. 35, no. 2, 2014, pp. 247-249. https://doi.org/10.1109/LED.2013.2294175
- T. Hayashida et al., "Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2kV," Appl. Phys. Express, vol. 10, 2017, article no. 061003.
- X. A. Cao et al., "Growth and characterization of GaN PiN rectifiers on free standing GaN," Appl. Phys. Lett., vol. 87, 2005, article no. 053503.
- Y. Yoshizumi et al., "High breakdown voltage pn junction diodes on GaN substrates," J. Cryst. Growth, vol. 298, 2007, pp. 875-878. https://doi.org/10.1016/j.jcrysgro.2006.10.246
- Y. Hatakeyama et al., "Over 3.0 GW/cm2 figure of merit GaN pn junction diodes on free standing GaN substrates," IEEE Electron Device Lett., vol. 32, 2011, pp. 1674-1676. https://doi.org/10.1109/LED.2011.2167125
- S. Chowdhury et al., "CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion," IEEE Electron Device Lett., vol. 33, 2012, pp. 41-43. https://doi.org/10.1109/LED.2011.2173456
- H. Nie et al., "Remarkable reduction of on-resistance by ion implantation in GaN/AlGaN/GaN HEMTs with low gate leakage current," IEEE Electron Device Lett., vol. 35, 2014, pp. 939-941. https://doi.org/10.1109/LED.2014.2339197
- Q. Diduck et al., "1000 V vertical JFET using bulk GaN," ECS Trans., vol. 58, 2013, pp. 295-298. https://doi.org/10.1149/05804.0295ecst
- https ://nexgenpowersystems .com/wp-content/uploads/2016/06/GaN-is-Great-v4.pdf
- T. Oka et al., "Vertical GaN based trench metal oxide semiconductor field-effect transistors on a freestanding GaN substrate with blocking voltage of 1.6 kV," Appl. Phys. Express, vol. 7, 2014, pp. 021002-1-021002-4. https://doi.org/10.7567/APEX.7.021002
- T. Oka et al., "1.8 mΩ·cm2 vertical GaN based trench metal-oxide-semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation," Appl. Phys Express, vol. 8, 2015, pp. 054101-1-054101-4. https://doi.org/10.7567/APEX.8.054101
- M. Sun et al., "High-performance GaN vertical fin power transistors on bulk GaN substrates," IEEE Electron Device Lett., vol. 38, 2017, pp. 509-512. https://doi.org/10.1109/LED.2017.2670925
- Y. Zhang et al., "Large-area 1.2-kV GaN vertical power FinFETs with a record switching figure of merit," IEEE Electron Device Lett., vol. 40, pp. 75-78.