Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Advanced Tellurium-Based Threshold Switching Devices for High-Density Memory Arrays

Tellurium 기반 휘발성 문턱 스위칭 및 고집적 메모리용 선택소자 응용 연구

  • Seunghwan Kim (Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST)) ;
  • Changhwan Kim (Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST)) ;
  • Namwook Hur (Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST)) ;
  • Joonki Suh (Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST))
  • 김승환 (울산과학기술원 신소재공학과) ;
  • 김창환 (울산과학기술원 신소재공학과) ;
  • 허남욱 (울산과학기술원 신소재공학과) ;
  • 서준기 (울산과학기술원 신소재공학과)
  • Received : 2023.09.04
  • Accepted : 2023.09.16
  • Published : 2023.11.01
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Abstract

High-density crossbar arrays based on storage class memory (SCM) are ideally suited to handle an exponential increase in data storage and processing as a central hardware unit in the era of AI-based technologies. To achieve this, selector devices are required to be co-integrated with SCM to address the sneak-path current issue that indispensably arises in such crossbar-type architecture. In this perspective, we first summarize the current state of tellurium-based threshold-switching devices and recent advances in the material, processing, and device aspects. We thoroughly review the physicochemical properties of elemental tellurium (Te) and representative binary tellurides, their tailored deposition techniques, and operating mechanisms when implemented in two-terminal threshold switching devices. Lastly, we discuss the promising research direction of Te-based selectors and possible issues that need to be considered in advance.

Keywords

Acknowledgement

This work was supported by the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (2022M3I7A2079098) and by the research project fund (1.230013.01) of UNIST.

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