마이크로전자및패키징학회지 (Journal of the Microelectronics and Packaging Society)

  • 제30권3호
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  • Pages.94-101
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  • 2023
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  • 1226-9360(pISSN)
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  • 2287-7525(eISSN)
한국마이크로전자및패키징학회 (The Korean Microelectronics and Packaging Society)
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원자층 증착법 기반 양이온-음이온 이중 도핑 효과에 따른 ZnO 박막의 전기적 특성 비교 연구

An Investigation of Electrical Properties in Cation-anion Codoped ZnO by Atomic Layer Deposition

  • 김동은 (연세대학교 신소재공학과) ;
  • 김건우 (연세대학교 신소재공학과) ;
  • 강경문 (연세대학교 신소재공학과) ;
  • ;
  • 박형호 (연세대학교 신소재공학과)
  • Dong-eun Kim (Department of Materials Science and Engineering, Yonsei University) ;
  • Geonwoo Kim (Department of Materials Science and Engineering, Yonsei University) ;
  • Kyung-Mun Kang (Department of Materials Science and Engineering, Yonsei University) ;
  • Akendra Singh Chabungbam (Department of Materials Science and Engineering, Yonsei University) ;
  • Hyung-Ho Park (Department of Materials Science and Engineering, Yonsei University)
  • 투고 : 2023.09.13
  • 심사 : 2023.09.23
  • 발행 : 2023.09.30
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⟨ 이전 논문 다음 논문 ⟩

초록

투명 전도성 산화물(TCO)를 대체할 수 있는 대표적인 물질로 알려진 ZnO는 3.37 eV의 bandgap과 60 meV의 exciton binding energy를 가진 반도체 물질이다. 본 연구에서는 투명 전극으로 사용하기 위한 높은 전기적 특성을 확보하기 위해 원자층 증착법을 기반으로 양이온과 음이온의 단일 및 이중 도핑에 따라 성장한 ZnO 박막을 제작하였다. 3가 양이온 Al, Ga과 음이온 F이 단일 및 이중 도핑된 ZnO 박막의 구조적, 광학적 특성 및 전기적 특성을 확인하였다. 단일 도핑의 경우, ZnO에 donor로 작용하는 Al, Ga, F에 의해 캐리어 농도가 도핑 전에 비해 증가하였고 근자외선 영역에서의 band-edge absorption이 증가하는 것을 확인하였다. 단일 도핑 중에서는 F이 ZnO 내 산소 공공 자리에 passivation 되면서 높은 mobility와 함께 가장 높은 전도도를 보였다. 이중 도핑의 경우, 각 원소들의 도핑 효과가 더해지면서 단일 도핑에 비해 높은 전기적 특성을 보였다. 결과적으로 Ga-F에 비해 Al-F 도핑 시 ionic radius 차이에 의한 lattice distortion 감소 및 delocalized 된 전자 상태의 증가로 가장 낮은 비저항 값을 보였으며 PDOS 분석을 통한 시뮬레이션 데이터로 측정 값과 일치하는 결과를 확인했다.

Zinc oxide(ZnO) is a semiconductor material with a bandgap of 3.37 eV and an exciton binding energy of 60 meV for various applications. Recently ZnO has been proven to enhance its electrical properties for utilization as an alternative for transparent conducting oxide (TCO) materials. In this study, cation(Al, Ga)-anion(F) single and double doped ZnO thin films were grown by atomic layer deposition (ALD) to enhance the electrical properties. The structural and optical properties of doped ZnO thin films were analyzed, and doping effects were confirmed to electrical characteristics. In single doped ZnO, it was observed that the carrier concentration was increased after doping, acting as a donor to ZnO. Among the single doping elements, F doped ZnO(FZO) showed the highest mobility and conductivity due to the passivation effect of oxygen vacancies. In the case of double doping, higher electrical characteristics were observed compared to single doping. Among the samples, Al-F doped ZnO(AFZO) exhibited the lowest resistance value. This results can be attributed to an increase in delocalized electron states and a decrease in lattice distortion resulting from the differences in ionic radius. The partial density of states(PDOS) was also analyzed and observed to be consistent with the experimental results.

키워드

과제정보

이 성과는 정부(과학기술정보통신부)의 재원으로 한국연구재단의 지원을 받아 수행된 연구임(No. RS-2023-00208801).

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