Acknowledgement
This work was supported by a National Research Council of Science and Technology (NST) grant from the Korean Government (MSIT) (C.Shin, No. CAP-18-04-KRISS), the National Research Foundation of Korea(NRF) grant from Korean government (MSIT) (C. Shin, No. NRF-2020M3H4A3081882, G.M. Sun, No.1711078081).
References
- Baliga B. J. "Power Semiconductor Devices," PWS Publishing Company, p 476.
- Baliga B. J. "The IGBT Device : Physics, Design and Applications of the Insulated Gate Bipolar Transistor".
- Noriyuki Iwamuro, Thomas Laska, "IGBT history, state-of-the-art, and future prospects.", in: IEEE Transactions on Electron Devices, 2017, pp. 741-752.
- Praveen M. Shenoy, Sampat Shekhawat, Bob Brockway, "Application specific 1200V planar and trench IGBTs.", in: Twenty-First Annual IEEE Applied Power Electronics Conference and Exposition, 2006. APEC'06, IEEE, 2006.
- Malay Trivedi, S. Pendharkar, K. Shenai, "Switching characteristics of MCT's and IGBT's in power converters.", IEEE Trans. Electron. Dev. 43 (11) (1996), 1994-200.
- Sinsu Kyoung, Jung Eun Sik, Ey Goo Kang, "A study on characteristic improvement of IGBT with P-floating layer.", Int. J. Electr. Eng. Technol. 9 (2) (2014) 686-694. https://doi.org/10.5370/JEET.2014.9.2.686
- Ling-Ling Li, et al., "Renewable energy utilization method: a novel Insulated Gate Bipolar Transistor switching losses prediction model.", J. Clean. Prod. 176 (2018) 852-863. https://doi.org/10.1016/j.jclepro.2017.12.051
- Masakazu Nakabayashi, et al., "A study on radiation damage of IGBTs by 2-MeV electrons at different irradiation temperatures.", Nucl. Instrum. Methods Phys. Res. Sect. B Beam Interact. Mater. Atoms 219 (2004) 676-679. https://doi.org/10.1016/j.nimb.2004.01.141
- M. Saggio, et al., "Innovative localized lifetime control in high-speed IGBTs.", IEEE Electron. Device Lett. 18 (7) (1997) 333-335. https://doi.org/10.1109/55.596928
- Stephane Azzopardi, et al., Local lifetime control IGBT structures: turn-off performances comparison for hard-and soft-switching between 1200V trench and new planar PT-IGBTs, Microelectron. Reliab. 41 (9-10) (2001) 1731-1736. https://doi.org/10.1016/S0026-2714(01)00212-8
- X. Jorda, et al., "Electrical parameter variation of PT-IGBT by backside proton irradiation.", in: 2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No. 03TH8676), vol. 2, IEEE, 2003.
- P.G. Fuochi, "Irradiation of power semiconductor devices by high energy electrons: the Italian experience.", Radiat. Phys. Chem. 44 (4) (1994) 431-440. https://doi.org/10.1016/0969-806X(94)90084-1
- Daniel M. Fleetwood, "Total ionizing dose effects in MOS and low-dose-rate-sensitive linear-bipolar devices.", IEEE Trans. Nucl. Sci. 60 (3) (2013) 1706-1730. https://doi.org/10.1109/TNS.2013.2259260
- Timothy R. Oldham, F.B. McLean, "Total ionizing dose effects in MOS oxides and devices.", IEEE Trans. Nucl. Sci. 50 (3) (2003) 483-499. https://doi.org/10.1109/TNS.2003.812927
- J. Gasiot, "Radiation Effects on Devices: Total Ionizing Dose, Displacement Effect, Single Event effect.", CERN Training, 2000 available in ATLAS Radiation Hard Electronics Web Page.
- Marta Bagatin, Simone Gerardin, "Ionizing Radiation Effectsin Electronics.", 2016.
- Marian Badila, et al., "The electron irradiation effects on silicon gate dioxide used for power MOS devices.", Microelectron. Reliab. 41 (7) (2001) 1015-1018. https://doi.org/10.1016/S0026-2714(01)00060-9
- G. Schwarze, A. Frasca, Neutron, gamma ray and post-irradiation thermal annealing effects onpower semiconductor switches, Conf. Adv. SEI. Technol. (1991) 1-8.
- Lei Li, et al., "Experimental investigation on displacement damage effects of trench field-stop reverse-conducting insulated-gate bipolar transistor.", IEEE Trans. Nucl. Sci. 69 (9) (2022) 2065-2073. https://doi.org/10.1109/TNS.2022.3191355
- Sung Ho Ahn, Gwang Min Sun, Hani Baek, "Turn-off time improvement by fast neutron irradiation on pnp Si Bipolar Junction Transistor.", Nucl. Eng. Technol. 54 (2) (2022) 501-506. https://doi.org/10.1016/j.net.2021.11.009
- Xue Zhang, Hongxing Yu, Bangyang Xia, Wenjie Li, Xilin Zhang, " research on ultra high flux research reactor.", Proc. 23 rd. Pac. Basin. Nucl. Conf. 1 (2022) 887-897.
- I.O.P. Conf, Series: J. Phys. Conf. 1021 (2018), 012037.
- Ha Wi-Ho, Se-Young Park, Yoo Jaeryong, Seokwon Yoon, Seung-Sook Lee, Jungho Kim, Jong Kyung Kim, "Measurement of neutron spectra in MC50 cyclotron using Bonner sphere spectrometer with LiI scintillation detector", J. Radiat. Protect. Res 38 (3) (2013) 143-148. https://doi.org/10.14407/jrp.2013.38.3.143
- H.J. Barnaby, "Total-ionizing-dose effects in modern CMOS technologies.", IEEE Trans. Nucl. Sci. 53 (6) (2006) 3103-3121. https://doi.org/10.1109/TNS.2006.885952
- Pavel Hazdra, Stanislav Popelka, "Displacement damage and total ionisation dose effects on 4H-SiC power devices.", IET Power Electron. 12 (15) (2019) 3910-3918. https://doi.org/10.1049/iet-pel.2019.0049
- Shuai Yang, et al., "Infrared absorption spectrum studies of the VO defect in fast-neutron-irradiated Czochralski silicon.", J. Cryst. Growth 280 (1-2) (2005) 60-65. https://doi.org/10.1016/j.jcrysgro.2005.03.046
- H. Mizubayashi, S. Okuda, "Elastic after-effect studies of lattice defects in Mo after fast neutron irradiation at 5 K.", Radiat. Eff. 33 (4) (1977) 221-235. https://doi.org/10.1080/00337577708233111
- Shuai Yang, et al., "FTIR study on VO 2 defect in fast neutron irradiated czochralski silicon.", Acta Phys. Sin. 54 (5) (2005) 2256-2260. https://doi.org/10.7498/aps.54.2256
- M. Moll, et al., "Comparison of defects produced by fast neutrons and 60Co-gammas in high-resistivity silicon detectors using deep-level transient spectroscopy.", Nucl. Instrum. Methods Phys. Res. Sect. A Accel. Spectrom. Detect. Assoc. Equip. 388 (3) (1997) 335-339. https://doi.org/10.1016/S0168-9002(97)00003-X