한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제36권5호
  • /
  • Pages.442-453
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  • 2023
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Terminal Configuration and Growth Mechanism of III-V on Si-Based Tandem Solar Cell: A Review

  • Alamgeer (Interdisciplinary Program in Photovoltaic System Engineering, Sungkyunkwan University) ;
  • Muhammad Quddamah Khokhar (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Muhammad Aleem Zahid (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Hasnain Yousuf (Interdisciplinary Program in Photovoltaic System Engineering, Sungkyunkwan University) ;
  • Seungyong Han (Interdisciplinary Program in Photovoltaic System Engineering, Sungkyunkwan University) ;
  • Yifan Hu (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Youngkuk Kim (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Suresh Kumar Dhungel (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Junsin Yi (Interdisciplinary Program in Photovoltaic System Engineering, Sungkyunkwan University)
  • 투고 : 2023.03.09
  • 심사 : 2023.06.20
  • 발행 : 2023.09.01
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초록

Tandem or multijunction solar cells (MJSCs) can convert sunlight into electricity with higher efficiency (η) than single junction solar cells (SJSCs) by dividing the solar irradiance over sub-cells having distinct bandgaps. The efficiencies of various common SJSC materials are close to the edge of their theoretical efficiency and hence there is a tremendous growing interest in utilizing the tandem/multijunction technique. Recently, III-V materials integration on a silicon substrate has been broadly investigated in the development of III-V on Si tandem solar cells. Numerous growth techniques such as heteroepitaxial growth, wafer bonding, and mechanical stacking are crucial for better understanding of high-quality III-V epitaxial layers on Si. As the choice of growth method and substrate selection can significantly impact the quality and performance of the resulting tandem cell and the terminal configuration exhibit a vital role in the overall proficiency. Parallel and Series-connected configurations have been studied, each with its advantage and disadvantages depending on the application and cell configuration. The optimization of both growth mechanisms and terminal configurations is necessary to further improve efficiency and lessen the cost of III-V on Si tandem solar cells. In this review article, we present an overview of the growth mechanisms and terminal configurations with the areas of research that are crucial for the commercialization of III-V on Si tandem solar cells.

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과제정보

This research was financially supported the by New and Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Korean Ministry of Trade, Industry, and Energy (MOTIE) (Project No.20218520010100 and 20203040010320).

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