Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Effect of AlF3 addition to the plasma resistance behavior of YOF coating deposited by plasma-spraying method

플라즈마-스프레이법에 의해 코팅한 옥시불화이트륨(YOF) 증착층의 플라즈마 내식성에 미치는 불화알루미늄(AlF3) 첨가 효과

  • Young-Ju Kim (R&D Center, Daechan Technology Co., Ltd.) ;
  • Je Hong Park (Department of Materials Science and Engineering, Korea National University of Transportation) ;
  • Si Beom Yu (Department of Materials Science and Engineering, Korea National University of Transportation) ;
  • Seungwon Jeong (Department of Materials Science and Engineering, Korea National University of Transportation) ;
  • Kang Min Kim (Korea Institute of Industrial Technology) ;
  • Jeong Ho Ryu (Department of Materials Science and Engineering, Korea National University of Transportation)
  • 김영주 ((주)대찬테크 기술연구소) ;
  • 박제홍 (한국교통대학교 에너지소재공학전공) ;
  • 유시범 (한국교통대학교 에너지소재공학전공) ;
  • 정승원 (한국교통대학교 에너지소재공학전공) ;
  • 김강민 (한국생산기술연구원 강원본부) ;
  • 유정호 (한국교통대학교 에너지소재공학전공)
  • Received : 2023.08.03
  • Accepted : 2023.08.17
  • Published : 2023.08.31
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Abstract

In order to manufacture a semiconductor circuit, etching, cleaning, and deposition processes are repeated. During these processes, the inside of the processing chamber is exposed to corrosive plasma. Therefore, the coating of the inner wall of the semiconductor equipment with a plasma-resistant material has been attempted to minimize the etching of the coating and particle contaminant generation. In this study, we mixed AlF3 powder with the solid-state reacted yttrium oxyfluoride (YOF) in order to increase plasma-etching resistance of the plasma spray coated YOF layer. Effects of the mixing ratio of AlF3 with YOF powder on crystal structure, microstructure and chemical composition were investigated using XRD and FE-SEM. The plasma-etching ratios of the plasma-spray coated layers were calculated and correlation with AlF3 mixing ratio was analyzed.

반도체 회로를 제조하기 위해서 에칭, 세척, 증착 등의 공정들이 반복적으로 진행된다. 따라서 이러한 공정이 진행되면 진공장비 내부는 부식성이 높은 가혹한 플라즈마 환경에 노출되게 된다. 따라서 반도체 공정 장비의 내부를 플라즈마 노출에 강한 재료를 사용하여 코팅층의 에칭과 오염 입자의 생성을 최소화하여야 한다. 본 연구에서는 고상합성법에 의해 합성된 옥시불화이트륨 (YOF)를 이용한 증착층의 플라즈마 식각 특성을 향상시키기 위하여 YOF 분말에 AlF3 분말을 혼합하여 플라즈마 스프레이 공정으로 Al 금속위에 증착시키고 그 특성을 분석하였다. AlF3 혼합비율의 증가에 따른 증착층의 결정구조, 미세구조 및 화학조성 변화를 조사하고 증착된 코팅층의 플라즈마 식각율을 측정하여 AlF3 혼합비율과의 상관관계를 분석하였다.

Keywords

Acknowledgement

본 연구는 2021년도 중소벤처기업부의 기술개발사업지원에 의한 연구임[과제번호 GS3147238].

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