한국재료학회지 (Korean Journal of Materials Research)

  • 제33권6호
  • /
  • Pages.229-235
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  • 2023
  • /
  • 1225-0562(pISSN)
  • /
  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
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Unusual Electrical Transport Characteristic of the SrSnO3/Nb-Doped SrTiO3 Heterostructure

  • De-Peng Wang (School of Physics and Electronic Information, Yantai University) ;
  • Rui-Feng Niu (School of Physics and Electronic Information, Yantai University) ;
  • Li-Qi Cui (School of Physics and Electronic Information, Yantai University) ;
  • Wei-Tian Wang (School of Physics and Electronic Information, Yantai University)
  • 투고 : 2023.03.16
  • 심사 : 2023.05.24
  • 발행 : 2023.06.27
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초록

An all-perovskite oxide heterostructure composed of SrSnO3/Nb-doped SrTiO3 was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO3 and Nb-doped SrTiO3 were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

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참고문헌

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