Journal of Power Electronics

The Korean Institute of Power Electronics (전력전자학회)
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SOI radiation-hardened 300 V half-bridge date driver IC design with high dv/dt noise immunity

  • Yuexin Gao (Institute of Microelectronics, Chinese Academy of Sciences) ;
  • Xiaowu Cai (Institute of Microelectronics, Chinese Academy of Sciences) ;
  • Zhengsheng Han (Institute of Microelectronics, Chinese Academy of Sciences) ;
  • Yun Tang (Institute of Microelectronics, Chinese Academy of Sciences) ;
  • Liqiang Ding (Institute of Microelectronics, Chinese Academy of Sciences) ;
  • Ruirui Xia (Institute of Microelectronics, Chinese Academy of Sciences) ;
  • Mali Gao (Institute of Microelectronics, Chinese Academy of Sciences) ;
  • Fazhan Zhao (Institute of Microelectronics, Chinese Academy of Sciences)
  • Received : 2022.03.18
  • Accepted : 2022.11.18
  • Published : 2023.05.20
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Abstract

Noise immunity is a critical index of high-voltage half-bridge gate driver integrated circuits (IC). Various noise cancelation technologies have been proposed to improve dv/dt noise immunity with sacrifces in terms of area and propagation delay time. Besides, when it is applied to an inductive load, the half-bridge driver is vulnerable to negative surges at the VS terminal, which is the ofset ground of the high-side channel. A 300 V half-bridge gate driver IC with noise rejection module is designed in this paper. The noise immunity can be improved to 87.5 V/ns. The VS negative swing region can be extended to - 5.1 V. In addition, the proposed driver IC can work normally at a working frequency of 500 kHz and the delay matching time between the high-side and the low-side is less than 4 ns. The propagation delay time of the high-side channel is measured at 71.6 ns. Furthermore, gamma ray irradiation experimental results show that the proposed structure presents a good radiation tolerance of 100 krad (Si). The presented half-bridge gate driver IC is fabricated with the silicon-on-insulator (SOI) bipolar-CMOS-DMOS (BCD) process, which occupied an area of 1.86 mm2.

Keywords

Acknowledgement

This work was supported by the National Natural Science Foundation of China under contract NSFC 61874135.

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