Nuclear Engineering and Technology

Korean Nuclear Society (한국원자력학회)
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Electrical characteristics and deep-level transient spectroscopy of a fast-neutron-irradiated 4H-SiC Schottky barrier diode

  • Received : 2022.07.20
  • Accepted : 2022.08.21
  • Published : 2023.01.25
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Abstract

The dependence of the electrical characteristics on the fast neutron fluence of an epitaxial 4H-SiC Schottky barrier diode (SBD) was investigated. The 30 MeV cyclotron was used for fast neutron irradiation. The neutron fluences evaluated through Monte Carlo simulation were in the 2.7 × 1011 to 1.45 × 1013 neutrons/cm2 range. Current-voltage and capacitance-voltage measurements were performed to characterize the samples by extracting the parameters of the irradiated SBDs. Neutron-induced defects in the epitaxial layer were identified and quantified using a deep-level transient spectroscopy measurement system developed at the Korea Atomic Energy Research Institute. As the neutron fluence increased from 2.7 × 1011 to 1.45 × 1013 neutrons/cm2, the concentration of the Z1/2 defects increased by approximately 20 times. The maximum defect concentration was estimated as 1.5 × 1014 cm-3 at a neutron fluence of 1.45 × 1013 neutrons/cm2.

Keywords

Acknowledgement

This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea government(MSIT) (NRF-2017M2A2A6A05018527).

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