반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

스프레이 공정을 이용한 nc-ZnO/ZnO 전계효과트랜지스터의 광학적 노출에 대한 열화 현상 분석

The Instability Behaviors of Spray-pyrolysis Processed nc-ZnO/ZnO Field-effect Transistors Under Illumination

  • 조준희 (상명대학교 전자공학과)
  • Junhee Cho (Department of Electronics Engineering, Sangmyung University)
  • 투고 : 2023.03.03
  • 심사 : 2023.03.22
  • 발행 : 2023.03.31
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초록

Metal oxide semiconductor (MOS) adapting spray-pyrolysis deposition technique has drawn large attention based on their high quality of intrinsic and electrical properties in addition to simple and low-cost processibility. To fully utilize the merits of MOS field-effect transistors (FETs) , transparency, it is important to understand the instability behaviors of FETs under illumination. Here, we studied the photo-induced properties of nc-ZnO/ZnO field-effect transistors (FETs) based on spray-pyrolysis under illumination which incorporating ZnO nanocrystalline nanoparticles into typical ZnO precursor. Our experiments reveal that nc-ZnO in active layer suppressed the light instabilities of FETs.

키워드

과제정보

이 성과는 정부(과학기술정보통신부)의 재원으로 한국연구재단의 지원을 받아 수행된 연구임(No.2022R1G1A1011329).

참고문헌

  1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano and H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature, vol. 432, pp. 488-492, Nov. 2004. https://doi.org/10.1038/nature03090
  2. I. Seo, and S. Ryu, "Structural and Electrical Properties of Aluminum Doped ZnO Electrodes Prepared by Atomic Layer Deposition for Application in Organic Solar Cells," Journal of the Semiconductor & Display Technology, Vol. 13, No. 2, pp.1-6, 2014.
  3. W.-H. Lee, W.-T. Jang, J.-S. Kim and S.-N. Lee, "Top-emission Electroluminescent Devices based on Gadoped ZnO Electrodes," Journal of the Semiconductor & Display Technology, Vol. 16, No. 2, pp.44-48, 2017.
  4. M. Yu and J. Jo, "Sputtering Growth of ZnO Thin-Film Transistor Using Zn Target," Journal of the Semiconductor & Display Technology, Vol. 13, No. 3, pp.35-38, 2014.
  5. D. Yoo, H. Kim, J. Kim and J. Jo, "Current Variation in ZnO Thin-Film Transistor under Different Annealing Conditions," Journal of the Semiconductor & Display Technology, Vol. 13, No. 1, pp.63-66, 2014.
  6. J. K. Jeong, "Photo-bias instability of metal oxide thin film transistors for advanced active matrix displays," J Mater Res Vol. 28, No. 16, pp. 2071-2084, 2013. https://doi.org/10.1557/jmr.2013.214
  7. Y.-S. Shiah, K. Sim, Y. Shi, K. Abe, S. Ueda, M. Sasase, J. Kim and H. Hosono, "Mobility-stabilty trade-off in oxide thin-film transistors,", Nat Electron., Vol. 4, pp.800-807, 2021. https://doi.org/10.1038/s41928-021-00671-0
  8. J-H. Shin, J-S. Lee, C-S. Hwang, S-H.K. Park, W-S. Cheong, M. Ryu, C-W. Byun, J-I. Lee, and H.Y. Chu: "Light effects on the bias stability of transparent ZnO thin film transistors," ETRI J. 31, pp.62-64, 2009. https://doi.org/10.4218/etrij.09.0208.0266
  9. K. Abe, K. Ota, and T. Kuwagaki, "Device modeling of amorphous oxide semiconductor TFTs," Japanese Journal of Applied Physics, Vol.58, pp.090505, 2019.
  10. J. Cho, "The Study of nc-ZnO/ZnO Field-effect Transistors Fabricated by Spray-pyrolysis Process," Journal of the Semiconductor & Display Technology, Vol. 21, No. 3, pp.22-25, 2022.
  11. A. Bashir, P. H. Woebkenberg, J. Smith, J. M. Ball, G. Adamopoulos, D. Bradley, and T. D. Anthopoulos, "High-Performance Zinc Oxide Transistors and Circuits Fabricated by Spray Pyrolysis in Ambient Atmosphere," Advanced Materials, vol. 21, no. 21, pp. 2226-2231, 2015.
  12. A. Janotti and C. G. Van de Walle, "Oxygen vacancies in ZnO," Applied Physics Letters, Vol. 87, No. 12, 2005.
  13. J. Robertson and Y. Guo, "Light induced instability mechanism in amorphous InGaZn oxide semiconductors," Applied Physics Letters, Vol. 104, No. 16, pp. 162102, 2014.