과제정보
This work was supported by Korean Evaluation Institute of Industrial Technology (G01002665681).
참고문헌
- D. Montgomery, Introduction to Statistical Quality Control, New York: John Wiley & Sons, Inc., 3rd Ed. 1997.
- M. Baker, C. Himmel, and G. May, "Time Series Modeling of Reactive Ion Etching Using Neural Networks," IEEE Trans. Semi. Manufac., vol. 8, no. 1, pp. 62-71, Feb., 1995. https://doi.org/10.1109/66.350758
- D. Kim, S. J. Hong, "Use of Plasma Information in Machine-Learning-Based Fault Detection and Classification for Advanced Process Control," IEEE Trans. Semi. Manufac. vol. 34, no. 3, pp. 408-419, Aug., 2021. https://doi.org/10.1109/TSM.2021.3079211
- J. E. Choi, H. Park, Y. H. Lee, and S. J. Hong, "Virtual Metrology for Etch Profile in Silicon Trench Etching with SF6/O2/Ar Plasma, IEEE Trans. Semi. Manufac. vol. 35, no. 35, pp. 128-137, Feb., 2022. https://doi.org/10.1109/TSM.2021.3138918
- A. A. Nuhu, Q. Zeeshan, B. Safaei, and M. A. Shahzad, "Machine Learning-based Techniques for Fault Diagnosis in the Semiconductor Manufacturing Process: A Comparative Study," The Journal of Supercomputing, vol. 79, pp. 2031-2081, Feb., 2023. https://doi.org/10.1007/s11227-022-04730-x
- B. Roger, M. Berry, I. Turlik, P. Garrow and D. Castillo, "Soft Mask for Via Patterning in Benzocyclobutene," Int. J. Micro. and Elect. Packaging, vol 17, no. 3, pp. 210-218, 3rd Quarter, 1994.
- D. White, D. Boning, S. Butler and G. Barna, "Spatial Characterization of Wafer State Using Principal Component Analysis of Optical Emissions Spectra in Plasma Etch," IEEE Trans. Semi. Manufac., vol. 10, no. 1, Feb., 1997.
- S. Hong and G. May, "Neural Network Modeling of Reactive Ion Etching Using Principal Component Analysis of Optical Emission Spectroscopy Data," IEEE/SEMI Adv. Semi Manufac. Conf., Boston, MA, pp. 415-420, April 2002.
- G. May, "Manufacturing ICs the Neural Way," IEEE Spectrum, pp.47-51, Sept. 1994.