반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
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NF3 / H2O 원거리 플라즈마 건식 세정 조건 및 SiO2 종류에 따른 식각 이방 특성

Etching Anisotropy Depending on the SiO2 and Process Conditions of NF3 / H2O Remote Plasma Dry Cleaning

  • 오훈정 (연세대학교 비아이티 마이크로 팹 연구소) ;
  • 박세란 ((주)삼성전자) ;
  • 김규동 ((주)ACN) ;
  • 고대홍 (연세대학교 비아이티 마이크로 팹 연구소)
  • 투고 : 2023.11.07
  • 심사 : 2023.12.12
  • 발행 : 2023.12.31
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초록

We investigated the impact of NF3 / H2O remote plasma dry cleaning conditions on the SiO2 etching rate at different preparation states during the fabrication of ultra-large-scale integration (ULSI) devices. This included consideration of factors like Si crystal orientation prior to oxidation and three-dimensional structures. The dry cleaning process were carried out varying the parameters of pressure, NF3 flow rate, and H2O flow rate. We found that the pressure had an effective role in controlling anisotropic etching when a thin SiO2 layer was situated between Si3N4 and Si layers in a multilayer trench structure. Based on these observations, we would like to provide further guidelines for implementing the dry cleaning process in the fabrication of semiconductor devices having 3D structures.

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과제정보

이 연구 보고서는 정부의 재원으로 전자정보디바이스산업 원천기술개발사업(반도체) (과제번호 10043438) 및 한국연구재단의 기초연구사업(과제번호NRF- 2017R1A 2B2004986)의 지원을 받아 수행되었습니다.

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