과제정보
Madani Labed and Hojoong Kim contributed equally to this work.
DOI QR Code
Physical Operations of a Self-Powered IZTO/β-Ga2O3 Schottky Barrier Diode Photodetector
-
Madani Labed
(Laboratory of Semiconducting and Metallic Materials (LMSM), University of Biskra)
;
- Hojoong Kim (Department of Intelligent Mechatronics Engineering, and Convergence Engineering for Intelligent Drone, Sejong University) ;
- Joon Hui Park (Department of Intelligent Mechatronics Engineering, and Convergence Engineering for Intelligent Drone, Sejong University) ;
- Mohamed Labed (High Collage of Food Sciences and Food Industries) ;
- Afak Meftah (Laboratory of Semiconducting and Metallic Materials (LMSM), University of Biskra) ;
-
Nouredine Sengouga
(Laboratory of Semiconducting and Metallic Materials (LMSM), University of Biskra)
;
-
You Seung Rim
(Department of Intelligent Mechatronics Engineering, and Convergence Engineering for Intelligent Drone, Sejong University)
- 투고 : 2021.12.29
- 심사 : 2022.03.21
- 발행 : 20220000
초록
In this work, a self-powered, solar-blind photodetector, based on InZnSnO (IZTO) as a Schottky contact, was deposited on the top of Si-doped β-Ga2O3 by the sputtering of two-faced targets with InSnO (ITO) as an ohmic contact. A detailed numerical simulation was performed by using the measured J-V characteristics of IZTO/β-Ga2O3 Schottky barrier diodes (SBDs) in the dark. Good agreement between the simulation and the measurement was achieved by studying the effect of the IZTO workfunction, β-Ga2O3 interfacial layer (IL) electron affinity, and the concentrations of interfacial traps. The IZTO/β-Ga2O3 (SBDs) was tested at a wavelength of 255 nm with the photo power density of 1 mW/cm2. A high photo-to-dark current ratio of 3.70×105 and a photoresponsivity of 0.64 mA/W were obtained at 0 V as self-powered operation. Finally, with increasing power density the photocurrent increased, and a 17.80 mA/W responsivity under 10 mW/cm2 was obtained.