DOI QR코드

DOI QR Code

4H-SiC bulk single crystal growth using recycled powder

재생 분말을 활용한 4H-SiC 벌크 단결정 성장

  • Yeo, Im Gyu (Industrial Materials Research Group, Research Institute of Industrial Science & Technology (RIST)) ;
  • Lee, Jae Yoon (Industrial Materials Research Group, Research Institute of Industrial Science & Technology (RIST)) ;
  • Chun, Myong Chuel (Industrial Materials Research Group, Research Institute of Industrial Science & Technology (RIST))
  • 여임규 (산업소재연구그룹, (재)포항산업과학연구원) ;
  • 이재윤 (산업소재연구그룹, (재)포항산업과학연구원) ;
  • 전명철 (산업소재연구그룹, (재)포항산업과학연구원)
  • Received : 2022.08.16
  • Accepted : 2022.09.26
  • Published : 2022.10.31

Abstract

This study is to verify the feasibility of SiC single crystal growth using recycled SiC powder. The fundamental physical properties such as particle size, shape, composition and impurities of the recycled powder were analyzed, and the sublimation behavior occurring inside the reactor were predicted using the basic data. As a result of comprehensive judgment, the physical properties of the recycled powder were suitable for single crystal growth, and single crystal growth experiments were conducted using this. 100 mm 4H-SiC single crystal ingot with a height of 25 mm was grown without polytype inclusion. In the case of micro-pipe density was 0.02 ea/cm2 and resistivity characteristics was 0.015~0.020 ohm·cm2, commercial level quality was obtained, but additional analysis related to dislocation density and stacking faults is required for device application.

본 연구는 재생된 SiC 분말을 이용하여 단결정 성장 가능성을 검증하는 것을 목적으로 한다. 재활용 분말의 입도, 형상, 조성, 불순물 등의 기초적인 물성을 분석하고, 이를 활용하여 반응기 내부에서 일어날 수 있는 승화 거동을 예측하였다. 종합적인 판단 결과, 재생 분말의 물성은 단결정 성장에 적합 하였고, 이를 이용하여 단결정 성장 실험을 진행하였다. 높이 25 mm, 직경 100 mm 4H-SiC 단결정 잉곳을 다른 다형혼입 없이 성장 시켰다. 동공 결함 밀도는 0.02 ea/cm2, 비저항은 0.015~0.020 ohm·cm2 측정되어 상용 수준의 품질을 얻었으나, 실제 소자 적용을 위해서는 전위 결함, 적층 결함과 관련된 추가 분석이 필요하다고 판단된다.

Keywords

Acknowledgement

본 연구는 2021년도 산업통상자원부 청정생산기반산업공생 기술개발사업(R&D) - 클린팩토리 기술개발(20014405)의 지원을 받아 수행된 연구입니다.

References

  1. Yu.M. Tairov and V.F. Tsvetkov, "General principles of growing large-size single crystals of various silicon carbide polytypes", J. Crystal Growth 52 (1981) 146. https://doi.org/10.1016/0022-0248(81)90184-6
  2. Yu.M. Tairov and V.F Tsvetkov, "Progress in controlling the growth of polytypic crystals", Progress in Crystal Growth and Characterization of Materials 7 (1983) 111. https://doi.org/10.1016/0146-3535(83)90031-X
  3. I.G. Yeo, T.H. Eun, J.Y. Kim, S.S. Lee, H.S. Seo and M.C. Chun, "Study on dislocation behaviors during PVT growth of 4H-SiC", Mater. Sci. Forum 963 (2019) 64. https://doi.org/10.4028/www.scientific.net/msf.963.64
  4. E.Y. Tupitsyn, A. Arulchakkaravarthi, R.V. Drachev and T.S. Sudarshan, "Controllable 6H-SiC to 4H-SiC polytype transformation during PVT method", J. Cryst. Growth 299 (2007) 70. https://doi.org/10.1016/j.jcrysgro.2006.10.258
  5. G. Augustine, V. Balakrishna and C.D. Brandt, "Growth and characterization of high-purity SiC single crystals", J. Cryst. Growth 211 (2000) 339. https://doi.org/10.1016/S0022-0248(99)00826-X
  6. I.G. Yeo, T.W. Lee, W.J. Lee, B.C. Shin, J.W. Choi, K.R. Ku and Y.H. Kim, "The quality investigation of 6H-SiC crystal grown by a conventional PVT method with various SiC powders", Trans. Electr. Electron. Mater. 11 (2010) 61. https://doi.org/10.4313/TEEM.2010.11.2.061
  7. D.G. Shin, H.R. Son, S. Heo, B.S. Kim, J.E. Han, K.S. Min and D.H. Lee, "Impurity behavior of high purity SiC powder during SiC crystal growth", Mater. Sci. Forum 778 (2014) 22. https://doi.org/10.4028/www.scientific.net/MSF.778-780.22
  8. J.G. Kim, E.J. Jung, Y. Kim, Y. Makarov and D.J. Choi, "Quality improvement of single crystal 4H SiC grown with a purified β-SiC powder source", Ceram. Int. 40 (2014) 3953. https://doi.org/10.1016/j.ceramint.2013.08.041
  9. J.Y. Park, J.H. Kim, W.Y. Kim, M.S. Park, Y.S. Jang, E.J. Jung, J.K. Kang and W.J Lee, "Crystal growth of ring-shaped SiC polycrystal via physical vapor transport method", J. Korea Cryst. Growth Cryst. Technol. 30 (2020) 163. https://doi.org/10.6111/JKCGCT.2020.30.5.163