Applied Microscopy

  • Volume 52
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  • Pages.1.1-1.8
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  • 2022
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  • 2287-5123(pISSN)
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  • 2287-4445(eISSN)
Korean Society of Microscopy (한국현미경학회)
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Automated measurement and analysis of sidewall roughness using three-dimensional atomic force microscopy

  • Received : 2021.12.20
  • Accepted : 2022.02.26
  • Published : 2022.12.31
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Abstract

As semiconductor device architecture develops, from planar field-effect transistors (FET) to FinFET and gate-all-around (GAA), there is an increased need to measure 3D structure sidewalls precisely. Here, we present a 3-Dimensional Atomic Force Microscope (3D-AFM), a powerful 3D metrology tool to measure the sidewall roughness (SWR) of vertical and undercut structures. First, we measured three different dies repeatedly to calculate reproducibility in die level. Reproducible results were derived with a relative standard deviation under 2%. Second, we measured 13 different dies, including the center and edge of the wafer, to analyze SWR distribution in wafer level and reliable results were measured. All analysis was performed using a novel algorithm, including auto fattening, sidewall detection, and SWR calculation. In addition, SWR automatic analysis software was implemented to reduce analysis time and to provide standard analysis. The results suggest that our 3D-AFM, based on the tilted Z scanner, will enable an advanced methodology for automated 3D measurement and analysis.

Keywords

Acknowledgement

This research was supported by MOTIE (Ministry of Trade, Industry, and Energy) in Korea, under the Fostering Global Talents for Innovative Growth Program (P0008745) supervised by the Korea Institute for Advancement of Technology (KIAT), and the Industrial Strategic Technology Development Program-Materials Parts Technology Development Program (20017214 to S.-J.C.). The authors thank Mr. Hubert H. Cho for his excellent proof reading and helpful comments.

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