Journal of Power Electronics

The Korean Institute of Power Electronics (전력전자학회)
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LLC resonant DC-to-DC power converter with synchronous rectifiers using high- and medium-voltage gallium nitride-based transistors

  • Jang, Jinhaeng (Power Modular Team, Home Entertainment Company, LG Electronics)
  • Received : 2022.04.03
  • Accepted : 2022.06.15
  • Published : 2022.08.20
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Abstract

The design demands for compact and low-profile power supplies are rapidly growing due to the preference for smaller and thinner appearance of industrial and consumer electronics. In this study, practical design methods for a high-density and low-profile DC-to-DC power converter are proposed. The prototype board of a 24 V/20 A LLC resonant converter was implemented. Given that a half-bridge circuit on the primary side operated with zero-voltage switching, the nominal operating frequency was further increased to 300 kHz. Notably, when an LLC series resonant converter with a low output voltage and high load current operates at a high switching frequency, several practical design considerations are required. A synchronous rectifier on the secondary side was configured to reduce the conduction losses. Gallium nitride-based transistors with high- and medium-voltage ratings were applied to the input and output sides due to their superior switching properties. A multi-layered PCB substrate was introduced to facilitate the design of the devices. Finite-element analysis of the PCB layout and thermal design was empirically conducted through computer simulation techniques. The parallelly connected gallium nitride-based transistors achieved a reliable operation and superior performance. Through a magnetic analysis, the design of a low-profile integrated transformer was optimized for high-frequency operation. Regarded as the most critical issue in gallium nitride-based transistors operating at high frequencies, the performance in electromagnetic interference was verified through effective measurements of conducted and radiated noises.

Keywords

References

  1. Rimon, G., Ahmed, N., Fred, C.L., Qiang, L.: LLC resonant converter with 99% efficiency for data center server. In: Proceeding of IEEE Applied Power Electronics Conference and Exposition, pp. 310-319 (2021)
  2. Xinyuan, D., Fei, D., Yue, Z., Kevin, U., Nenad, M.: A high-density 5kW 800V to 48V DC/DC converter for vehicle applications. In: Proceeding of IEEE Energy Conversion Congress and Exposition, pp. 10-14 (2021)
  3. Jones, E.A., Wang, F.F., Costinett, D.: Review of commercial GaN power devices and GaN-based converter design challenges. IEEE J. Emerg. Select. Topics Power Electron. 4(3), 707-719 (2016) https://doi.org/10.1109/JESTPE.2016.2582685
  4. Chen, K.J., Haberlen, O., Lidow, A., Tsai, C.L., Ueda, T., Uemoto, Y., Wu, Y.: GaN-on-Si power technology: devices and applications. IEEE Trans. Electron. 64(3), 779-795 (2017) https://doi.org/10.1109/TED.2017.2657579
  5. Lidow, A., de Rooij, M., Strydom, J., Reusch, D., Glaser, J.: GaN Transistors for Efficient Power Conversion, 3rd edn. John Wiley & Sons, New York (2019)
  6. Li, F., Hao, R., Lei, H., Zhang, X., You, X.: The influence of parasitic components on LLC resonant converter. Energies 12(22), 1-16 (2019)
  7. Wen, H., Gong, J., Zhao, X., Yeh, C., Lai, J.: Analysis of diode reverse recovery effect on ZVS condition for GaN-based LLC resonant converter. IEEE Trans. Power Electron. 34(12), 11952-11963 (2019) https://doi.org/10.1109/tpel.2019.2909426
  8. Mohamed, H., Ahmed, N., Fred, C.L., Qiang, L.: Low-loss integrated inductor and transformer structure and application in regulated LLC converter for 48-V bus converter. IEEE J. Emerg. Select. Topics Power Electron. 8(1), 589-600 (2020) https://doi.org/10.1109/jestpe.2019.2952878
  9. Texas instrument. Datasheet. https://www.ti.com/product/LMG3410R150. (March 28, 2022)
  10. Jang, J., Joung, M., Choi, B., Hong, S., Lee, S.: Dynamic analysis and control design of optocoupler-isolated LLC series resonant converters with wide input and load variations. IET Power Electron. 5(6), 755-764 (2012) https://doi.org/10.1049/iet-pel.2011.0289
  11. Sun, B., Zhang, Z., Andersen, M.A.E.: A comparison review of the resonant gate driver in the silicon MOSFET and the GaN transistor application. IEEE Trans. Ind. Appl. 55(6), 7776-7786 (2019) https://doi.org/10.1109/tia.2019.2914193
  12. Yuqi, W., Quanming, L., Alan, M.: Synchronous rectification for LLC resonant converter: an overview. IEEE Trans. Power Electron. 36(6), 7264-7280 (2021) https://doi.org/10.1109/TPEL.2020.3040603
  13. Infneon Datasheet. https://www.infneon.com/cms/en/product/power/mosfet/n-channel/bsc040n10ns5. (March 28, 2022)
  14. Glitz, E.S., Ordonez, M.: MOSFET power loss estimation in LLC resonant converters: time interval analysis. IEEE Trans. Power Electron. 34(12), 11964-11980 (2019) https://doi.org/10.1109/tpel.2019.2909903
  15. STMicroelectronics. Datasheet. https://www.st.com/resource/en/datasheet/stps40m100c.pdf (March 28, 2022)
  16. Rohde&Schwarz. Spectrum analyzer.https://www.rohde-schwarz.com//rs-fpc-spectrum-analyzer_63493-542324.html. (May 8, 2022)
  17. Luxondes. EM-scanphone. https://luxondes.com/en/an_scanphone/(May 8, 2022)
  18. Jinhaeng, J., Syam, K., Byungcho, C.P.: Current mode control for LLC series resonant dc-to-dc converters. Energies 8, 6098-6113 (2015) https://doi.org/10.3390/en8066098