Acknowledgement
National Natural Science Foundation of China, 61604027, Chongqing Science and Technology Commission, No. cstc2020jcyj-msxmX0550, Weizhong Chen.
References
- Napoli, E., Spirito, P., Strollo, A.G.M., Frisina, F., Fragapane, L., Fagone, D.: Design of IGBT with integral freewheeling diode. IEEE Elect. Dev. Lett. 23(9), 532-534 (2002) https://doi.org/10.1109/LED.2002.802590
- Sheng, K., Udugampola, U.N.K., Khoo, G.F.W., et al.: Dual gate lateral inversion layer emitter transistor. IEEE international conference on power electronics machines and drives, pp. 37-40, (2002)
- Luo, X., Yang, Y., Sun, T., et al.: A-snapback-free and low-loss short-anode SOI-LIGBT with self-adaptive resistance. IEEE Trans. Elect. Dev. 66(3), 1390-1395 (2019) https://doi.org/10.1109/ted.2019.2892068
- Huang, M., Li, J., Xie, C., et al.: Snapback-free reverse conducting IGBT with p-poly trench-collectors. Electron. Lett. 56, 153-155 (2020) https://doi.org/10.1049/el.2019.2951
- Duan, B., Sun, L., Yang, Y.: Analysis of the novel snapback-free LIGBT With fast-switching and improved latch-up immunity by TCAD simulation. IEEE Elect. Dev. Lett. 40(1), 63-66 (2019) https://doi.org/10.1109/led.2018.2881289
- Zhang, X.D., Wang, Y., Wu, X., et al.: An improved VCE-Eoff tradeof and snapback-free RC-IGBT with P pillars. IEEE Trans. Elect. Dev. 67, 2859-2864 (2020) https://doi.org/10.1109/ted.2020.2995137
- Iwamuro, N., Laska, T., et al.: IGBT history, state-of-the-art, and future prospects. IEEE Trans. Elect. Dev. 64, 741-752 (2017) https://doi.org/10.1109/TED.2017.2654599
- Xu, X., Chen, Z.: Simulation study of a novel full turn-on RC-IGBT with ultralow energy loss. IEEE Elect. Dev. Lett. 40, 757-760 (2019) https://doi.org/10.1109/led.2019.2905145
- Chen, W., Zhang, B., Li, Z.: Area-efficient fast-speed lateral IGBT with a 3-D n-region-controlled anode. IEEE Elect. Dev. Lett. 31(5), 467-469 (2010) https://doi.org/10.1109/LED.2010.2043638
- Zhang, L., Zhu, J., Sun, W.F., et al.: A high current density SOI-LIGBT with segmented trenches in the anode region for suppressing negative differential resistance regime. in Proc. Int. Symp. Power Semiconductor Devices ICs (ISPSD), pp. 49-52, (2015)
- Chen, W., Li, Z.H., Zhang, B., et al.: A snapback suppressed reverse-conducting IGBT with uniform temperature distribution. Chin. Phys. B 23(1), 018505 (2013) https://doi.org/10.1088/1674-1056/23/1/018505
- Deng, G.Q., Luo, X. R., Zhou, K., et al.: A snapback-free RC-IGBT with alternating N/P bufers in Proc. Int. Symp. power semiconductor devices ICs (ISPSD), pp. 417-419, (2012)
- Jiang, H., Zhang, B., Chen, W., et al.: A snapback suppressed reverse-conducting IGBT with a floating p-region in trench collector. IEEE Elect. Dev. Lett. 33(3), 417-419 (2012) https://doi.org/10.1109/LED.2011.2180357
- Deng, G.Q., Luo, X.R., Wei, J., et al.: A snapback-free reverse conducting insulated-gate bipolar transistor with discontinuous field-stop layer. IEEE Trans. Elect. Dev. 65(5), 1851-1861 (2018)
- Jiang, H., Wei, J., Zhang, B., Chen, W., Qiao, M., Li, Z.: Band-to-band tunneling injection insulated-gate bipolar transistor with a soft reverse-recovery built-in diode. IEEE Elect. Dev. Lett. 33(12), 1684-1686 (2012) https://doi.org/10.1109/LED.2012.2219612
- Hsu, W.C., Udrea, F., Hsu, H., Lin, W.: Reverse-conducting insulated gate bipolar transistor with an anti-parallel thyristor," 2010 22nd international symposium on power semiconductor devices & IC's (ISPSD), Hiroshima, Japan, pp. 149-152 (2010)
- Chen, W., Huang, Y., Li, S., Huang, Y., Han, Z.: A snapback-free and low-loss RC-IGBT with lateral FWD integrated in the terminal region. IEEE Access 7, 183589-183595 (2012) https://doi.org/10.1109/access.2019.2960438
- Jiang, H., Zhang, B., Chen, W., Liu, C., Rao, Z., Dong, B.: A snapback suppressed reverse conducting igbt with oxide trench collector. 2012 Asia-Pacific power and energy engineering conference, pp. 1-4, (2012)