전기전자학회논문지 (Journal of IKEEE)

  • 제26권4호
  • /
  • Pages.722-727
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  • 2022
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  • 1226-7244(pISSN)
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  • 2288-243X(eISSN)
한국전기전자학회 (Institute of Korean Electrical and Electronics Engineers)
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레이더 응용을 위한 X-대역 40W AlGaN/GaN 전력 증폭기 MMIC

A X-band 40W AlGaN/GaN Power Amplifier MMIC for Radar Applications

  • Byeong-Ok, Lim (R&D Division, Electronic Device Solution Inc.) ;
  • Joo-Seoc, Go (R&D Division, Electronic Device Solution Inc.) ;
  • Keun-Kwan, Ryu (Department of Electronic Engineering, Hanbat National University) ;
  • Sung-Chan, Kim (Department of Electronic Engineering, Hanbat National University)
  • 투고 : 2022.12.01
  • 심사 : 2022.12.27
  • 발행 : 2022.12.31
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초록

본 논문에서는 0.25 ㎛의 게이트를 갖는 AlGaN/GaN HEMT를 기반으로 개발된 X-대역 전력 증폭기 MMIC의 특성을 기술한다. 개발된 X-대역 전력 증폭기 MMIC는 9 GHz~10 GHz의 주파수 대역에서 21.6 dB 이상의 소신호 이득과 46.11dBm(40.83 W) 이상의 출력 전력을 가진다. 전력 부가 효율 특성은 43.09%~44.47%이며 칩의 크기는 3.6 mm×4.3 mm이다. 출력 전력 밀도는 2.69 W/mm2를 나타내었다. 개발된 AlGaN/GaN 전력 증폭기 MMIC는 다양한 X-대역 레이더 응용에 적용 가능하다.

In this paper, we present the design and characterization of a power amplifier (PA) monolithic microwave integrated circuit (MMIC) in the X-band. The device is designed using a 0.25 ㎛ gate length AlGaN/GaN high electron mobility transistor (HEMT) on SiC process. The developed X-band AlGaN/GaN power amplifier MMIC achieves small signal gain of over 21.6 dB and output power more than 46.11 dBm (40.83 W) in the entire band of 9 GHz to 10 GHz. Its power added efficiency (PAE) is 43.09% ~ 44.47% and the chip dimensions are 3.6 mm × 4.3 mm. The generated output power density is 2.69 W/mm2. It seems that the developed AlGaN/GaN power amplifier MMIC could be applicable to various X-band radar systems operating X-band.

키워드

과제정보

This work was supported by a research fund of Hanbat National University in 2021.

참고문헌

  1. D. Runton, et al., "History of GaN: High- Power RF Gallium Nitride (GaN) from Infancy to Manufacturable Process and Beyond," IEEE Microwave Magazine, vol.14, no.3, pp.82-466, 2013. DOI: 10.1109/MMM.2013.2240853
  2. R. Pengelly, et al., "A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs," IEEE Transactions on Microwave Theory and Techniques, vol.60, no.6, pp.1764-1783, 2013. DOI: 10.1109/TMTT.2012.2187535
  3. S. D'Angelo, et al., "A GaN MMIC chipset suitable for integration in future X-band space borne radar T/R module Frontends," in Proc. of 2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON), pp.1-4, 2016. DOI: 10.1109/MIKON.2016.7492014
  4. D. Shin, et al., "X-band GaN MMIC power amplifier for the SSPA of a SAR system," in Proc. of 2017 IEEE International Symposium on RadioFrequency Integration Technology (RFIT), pp.93-95, 2017. DOI: 10.1109/RFIT.2017.8048093
  5. Y. Lien, et al., "GaN technologies for applications from L- to Ka-band," in Proc. of 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), pp.1-5, 2017. DOI: 10.1109/COMCAS.2017.8244831
  6. "APA091030D," Ace technologies corp., [internet], http://www.rfmiso.com.
  7. "CMPA801B025D," Cree Inc., [internet], http://www.cree.com.
  8. "TGA2624," Qorvo Inc., [internet], http://www.qorvo.com.
  9. "CHA8610-99F," United Monolithic Semi., [internet], http://www.ums-gaas.com