반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

산소 후열처리가 Ga2O3/4H-SiC 이종접합 다이오드의 온도에 따른 전기적 특성에 미치는 영향 분석

Influence of Oxygen Annealing on Temperature Dependent Electrical Characteristics of Ga2O3/4H-SiC Heterojunction Diodes

  • 정승환 (광운대학교 전자재료공학과) ;
  • 이형진 (광운대학교 전자재료공학과) ;
  • 이희재 (광운대학교 전자재료공학과) ;
  • 변동욱 (광운대학교 전자재료공학과) ;
  • 구상모 (광운대학교 전자재료공학과)
  • Chung, Seung Hwan (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Lee, Hyung Jin (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Lee, Hee Jae (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Byun, Dong Wook (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Koo, Sang Mo (Department of Electronic Materials Engineering, Kwangwoon University)
  • 투고 : 2022.12.12
  • 심사 : 2022.12.20
  • 발행 : 2022.12.31
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

We analyzed the influence of post-annealing on Ga2O3/n-type 4H-SiC heterojunction diode. Gallium oxide (Ga2O3) thin films were deposited by radio frequency (RF) sputtering. Post-deposition annealing at 950℃ in an Oxygen atmosphere was performed. The material properties of Ga2O3 and the electrical properties of the diodes were investigated. Atomic Force Microscopy (AFM), X-Ray Diffraction and Scanning Electron Microscope (SEM) images show a significant increase in the roughness and crystallinity of the O2-annealed films. After Oxygen annealing X-ray Photoelectron Spectroscopy (XPS) shows that the atomic ratio of oxygen increases which is related to a decrease in oxygen vacancy within the Ga2O3 film. The O2-annealed diodes exhibited higher on-current and lower leakage current. Moreover, the ideality factor, barrier height, and thermal activation energy were derived from the current-voltage curve by increasing the temperature from 298 - 434K.

키워드

과제정보

This work was supported by the Technology Innovation Program Development of 1.2kV low-loss Gallium Oxide transistor (RS-2022-00144027) funded By the Ministry of Trade, Industry & Energy(MOTIE, Korea), Korea Institute for Advancement of Technology(KIAT) grant funded by the Korea Government(MOTIE) (P0012451) and has been conducted by the Research Grant of Kwangwoon University in 2022.

참고문헌

  1. Dong, L., Jia, R., Xin, B., & Zhang, Y. (2016). Effects of post-annealing temperature and oxygen concentration during sputtering on the structural and optical properties of β-Ga2O3 films. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 34(6), 060602. https://doi.org/10.1116/1.4963376
  2. Zhang, H., Deng, J., Pan, Z., Bai, Z., Kong, L., & Wang, J. (2017). Structural and optical properties of Nb-doped β-Ga2O3 thin films deposited by RF magnetron sputtering. Vacuum, 146, 93-96 https://doi.org/10.1016/j.vacuum.2017.09.033
  3. Yu, J., Nie, Z., Dong, L., Yuan, L., Li, D., Huang, Y., ... & Jia, R. (2019). Influence of annealing temperature on structure and photoelectrical performance of β-Ga2O3/4H-SiC heterojunction photodetectors. Journal of Alloys and Compounds, 798, 458-466 https://doi.org/10.1016/j.jallcom.2019.05.263
  4. Byun, D. W., Lee, Y. J., Oh, J. M., Schweitz, M. A., & Koo, S. M. (2021). Morphological and electrical properties of β-Ga2O3/4H-SiC heterojunction diodes. Electronic Materials Letters, 17(6), 479-484. https://doi.org/10.1007/s13391-021-00297-6
  5. Lee, Y. J., Schweitz, M. A., Oh, J. M., & Koo, S. M. (2020). Influence of annealing atmosphere on the characteristics of Ga2O3/4H-SiC n-n heterojunction diodes. Materials, 13(2), 434. https://doi.org/10.3390/ma13020434
  6. Qu, Y., Wu, Z., Ai, M., Guo, D., An, Y., Yang, H., ... & Tang, W. (2016). Enhanced Ga2O3/SiC ultraviolet photodetector with graphene top electrodes. Journal of Alloys and Compounds, 680, 247-251. https://doi.org/10.1016/j.jallcom.2016.04.134
  7. Phan, D. T., & Chung, G. S. (2011). The effect of post-annealing on surface acoustic wave devices based on ZnO thin films prepared by magnetron sputtering. Applied Surface Science, 257(9), 4339-4343. https://doi.org/10.1016/j.apsusc.2010.12.053
  8. Goyal, A., Yadav, B. S., Thakur, O. P., Kapoor, A. K., & Muralidharan, R. (2014). Effect of annealing on β-Ga2O3 film grown by pulsed laser deposition technique. Journal of alloys and compounds, 583, 214-219. https://doi.org/10.1016/j.jallcom.2013.08.115
  9. Djurado, E., Bouvier, P., & Lucazeau, G. (2000). Crystallite size effect on the tetragonal-monoclinic transition of undoped nanocrystalline zirconia studied by XRD and Raman spectrometry. Journal of Solid-State Chemistry, 149(2), 399-407. https://doi.org/10.1006/jssc.1999.8565
  10. Tien, C. H., Hsiao, B. W., Chen, C. M., Chen, M. I., Chiang, J. L., & Wuu, D. S. (2020). Nitrogen and oxygen annealing effects on properties of aluminum-gallium oxide films grown by pulsed laser deposition. Ceramics International, 46(15), 24147-24154. https://doi.org/10.1016/j.ceramint.2020.06.194
  11. Fang, D., He, F., Xie, J., & Xue, L. (2020). Calibration of binding energy positions with C1s for XPS results. Journal of Wuhan University of Technology-Mater. Sci. Ed., 35(4), 711-718. https://doi.org/10.1007/s11595-020-2312-7
  12. Akkaya, A., & Ayyildiz, E. (2016, April). Effects of post annealing on IVT characteristics of (Ni/Au)/Al0. 09Ga0. 91N Schottky barrier diodes. In Journal of Physics: Conference Series (Vol. 707, No. 1, p. 012015). IOP Publishing. https://doi.org/10.1088/1742-6596/707/1/012015
  13. Zeghdar, K., Dehimi, L., Saadoune, A., & Sengouga, N. (2015). Inhomogeneous barrier height effect on the current-voltage characteristics of an Au/n-InP Schottky diode. Journal of Semiconductors, 36(12), 124002. https://doi.org/10.1088/1674-4926/36/12/124002
  14. Cheung, S. K., & Cheung, N. W. (1986). Extraction of Schottky diode parameters from forward current-voltage characteristics. Applied physics letters, 49(2), 85-87. https://doi.org/10.1063/1.97359
  15. Li, A., Feng, Q., Zhang, J., Hu, Z., Feng, Z., Zhang, K., ... & Zhou, H. (2018). Investigation of temperature dependent electrical characteristics on Au/Ni/β-Ga2O3 Schottky diodes. Superlattices and Microstructures, 119, 212-217. https://doi.org/10.1016/j.spmi.2018.04.045