반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

고밀도 식각 플라즈마에서 비정질 탄소 하드 마스크의 형상 변형 해석을 위한 다각형 모델 개발

Development of Polygonal Model for Shape-Deformation Analysis of Amorphous Carbon Hard Mask in High-Density Etching Plasma

  • 송재민 (서울대학교 에너지시스템공학부) ;
  • 배남재 (서울대학교 에너지시스템공학부) ;
  • 박지훈 (서울대학교 에너지시스템공학부) ;
  • 유상원 (서울대학교 에너지시스템공학부) ;
  • 권지원 (서울대학교 에너지시스템공학부) ;
  • 박태준 (서울대학교 에너지시스템공학부) ;
  • 이인규 (서울대학교 에너지시스템공학부) ;
  • 김대철 (한국핵융합에너지연구원 플라즈마 장비 지능화연구단) ;
  • 김종식 (한국핵융합에너지연구원 플라즈마 장비 지능화연구단) ;
  • 김곤호 (서울대학교 에너지시스템공학부)
  • Song, Jaemin (Department of Energy Systems Engineering, Seoul National University) ;
  • Bae, Namjae (Department of Energy Systems Engineering, Seoul National University) ;
  • Park, Jihoon (Department of Energy Systems Engineering, Seoul National University) ;
  • Ryu, Sangwon (Department of Energy Systems Engineering, Seoul National University) ;
  • Kwon, Ji-Won (Department of Energy Systems Engineering, Seoul National University) ;
  • Park, Taejun (Department of Energy Systems Engineering, Seoul National University) ;
  • Lee, Ingyu (Department of Energy Systems Engineering, Seoul National University) ;
  • Kim, Dae-Chul (Plasma E.I. Convergence Research Center, Korea Institute of Fusion Energy) ;
  • Kim, Jong-Sik (Plasma E.I. Convergence Research Center, Korea Institute of Fusion Energy) ;
  • Kim, Gon-Ho (Department of Energy Systems Engineering, Seoul National University)
  • 투고 : 2022.11.10
  • 심사 : 2022.12.14
  • 발행 : 2022.12.31
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초록

Shape changes of hard mask play a key role in the aspect ratio dependent etch (ARDE). For etch process using high density and energy ions, deformation of hard mask shape becomes more severe, and high aspect ratio (HAR) etch profile is distorted. In this study, polygonal geometric model for shape-deformation of amorphous carbon layered hard mask is suggested to control etch profile during the process. Mask shape is modeled with polygonal geometry consisting of trapezoids and rectangles, and it provides dynamic information about angles of facets and etched width and height of remained mask shape, providing important features for real-time HAR etch profiling.

키워드

과제정보

이 논문은 2020년 정부(과학기술정보통신부)의 재원으로 국가과학기술연구회 2020년도 미래선도형 융합연구단사업 (No. CRC-20-01-NFRI) 및 BK21플러스 사업(No. 4199990314119) 및 삼성전자의 산학협력과제(패턴 내 전하 축적에 따른 이온 거동 및 식각 패턴 연구) 및 삼성디스플레이의 지원을 받아 수행된 연구임.

참고문헌

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