Acknowledgement
The authors would like to thank Mr Kim from KAPSEUNG Power System for helping fabrication and measurement of the test board.
References
- T. Liu, T. T. Y. Wong, and Z. J. Shen, A survey on switching oscillations in power converters, IEEE J. Emerg. Sel. Topics Power Electron. 8 (2020), no. 1, 893-908. https://doi.org/10.1109/jestpe.2019.2897764
- F. Yang et al., Analysis and experimental evaluation of middle-point inductance's effect on switching transients for multiple-chip power module package, IEEE Trans. Power Electron. 34 (2019), no. 7, 6613-6627. https://doi.org/10.1109/tpel.2018.2877167
- S. Li et al., Stray inductance reduction of commutation loop in the P-cell and N-cell-based IGBT phase leg module, IEEE Trans. Power Electron. 29 (2014), no. 7, 3616-3624. https://doi.org/10.1109/TPEL.2013.2279258
- S. Li et al., Reduction of stray inductance in power electronic modules using basic switching cells, in Proc. IEEE Energy Convers. Congress Expo. (Atlanta, GA, USA), Sept. 2010, pp. 2686-2691.
- Y. Ren et al., Voltage suppression in wire-bond-based multichip phase-leg SiC MOSFET module using adjacent decoupling concept, IEEE Trans. Ind. Electron. 64 (2017), no. 10, 8235-8246. https://doi.org/10.1109/TIE.2017.2714149
- D. Y. Jung et al., Power semiconductor SMD package embedded in multi-layered ceramic for low switching loss, ETRI J. 39 (2017), no. 6, 866-873. https://doi.org/10.4218/etrij.17.0117.0113
- Z. Chen et al., A 1200-V, 60-A SiC MOSFET multichip phase-leg module for high-temperature, high-frequency applications, IEEE Trans. Power Electron. 29 (2014), no. 5, 2307-2320. https://doi.org/10.1109/TPEL.2013.2283245
- M. Spang, Experiences with coupling inductances between commutation loop and gate circuit in power modules, in Proc. Eur. Conf. Power Electron. Appl. (Riga, Latvia), Sept. 2018, pp. 1-10.
- F. Yang et al., Electrical performance advancement in SiC power module package design with Kelvin drain connection and low parasitic inductance, IEEE J. Emerg. Sel. Topics Power Electron. 7 (2019), no. 1, 84-98. https://doi.org/10.1109/jestpe.2018.2870248
- Z. Liang et al., A phase-leg power module packaged with optimized planar interconnections and integrated double-sided cooling, IEEE J. Emerg. Sel. Topics Power Electron. 2 (2014), no. 3, 443-450. https://doi.org/10.1109/jestpe.2014.2312292
- P. Beckedahl, M. Spang, and O. Tamm, Breakthrough into the third dimension-sintered multi-layer flex for ultra-low inductance power modules, in Proc. Int. Conf. Power Electron. Syst. (Nuremberg, Germany), Feb. 2014, pp. 1-5.
- P. Beckedahl et al., 400A, 1200V SiC power module with 1nH commutation inductance, in Proc. Int. Conf. Power Electron. Syst. (Nuremberg, Germany), Mar. 2016, pp. 1-6.
- A. N. Lemmon, A. Shahabi, and K. Miskell, Multi-branch inductance extraction procedure for multi-chip power modules, in Proc. Workshop Wide Bandgap Power Devices Appl. (Fayetteville, AR, USA), Nov. 2016, pp. 95-100.
- T. Liu, T. T. Y. Wong, and Z. H. Shen, A new characterization technique for extracting parasitic inductances of SiC power MOSFETs in discrete and module packages based on two-port S-parameters measurement, IEEE Trans. Power Electron. 33 (2018), no. 11, 9819-9833. https://doi.org/10.1109/tpel.2017.2789240
- D. Y. Jung et al., 1700V full-SiC half-bridge power module with low switching loss, in Proc. Electron. Syst.-Integr. Technol. Conf. (Tonsberg, Norway), Sept. 2020, pp. 1-4.
- Infineon Technologies, Semiconductor & systems solutions, https://www.infineon.com/
- SEMIKRON, Power modules and systems, https://www.semikron.com/
- ROHM Co., Ltd., ROHM semiconductor, https://www.rohm.com/