Journal of Power Electronics

The Korean Institute of Power Electronics (전력전자학회)
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Exploration of switching characteristics of 4H-SiC floating junction Schottky barrier diodes with stronger blocking voltage capability

  • Nan, Yagong (School of Microelectronics, Xidian University) ;
  • Han, Genquan (School of Microelectronics, Xidian University)
  • Received : 2021.03.30
  • Accepted : 2021.06.28
  • Published : 2021.10.20
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Abstract

To promote applications in the field of power electronic devices, the switching characteristics of 4H-SiC Schottky barrier diodes with a floating junction structure were investigated. The rectangular pattern structure was employed as p+-buried layers of the floating junction due to its process convenience. In addition, some low-doped p--type layers were implanted in the drift region to improve the forward delayed conduction and to speed up the reverse recovery process. Crucial factors, such as the environment temperature, the doping concentrations of the drift region, and the dimensions of floating junction structure, which can have influences on the transient process of a device under certain bias conditions, were studied in detail by numerical simulations. Some results were quantitatively achieved by theoretical analysis. It was found that when retaining a breakdown voltage value of 4.49 kV, a low specific on-resistance of 5.87 mΩ·cm2, and a powerful capacity to carry current, when compared to the steeper reverse recovery of the conventional Schottky barrier diode, fast and soft switching characteristics with a reverse recovery time of 1.187 ns, and a value of 2.94 for the recovery softness factor, were obtained. The obtained results show that the technologic amelioration of the structure of devices can be advantageous in terms of the transient performance of the floating junction Schottky barrier diode and applications.

Keywords

Acknowledgement

This work was partially supported by the National Key Research and Development Project (Grant Nos. 2018YFB2200500, 2018YFB2202800, received by Genquan Han), and also by the National Natural Science Foundation of China (Grant Nos. 62025402, 62090033, 91964202, 92064003, 61874081, 61851406, 62004149 and 62004145, received by Genquan Han; and 11365007, received by Yagong Nan).

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