Journal of Power Electronics

The Korean Institute of Power Electronics (전력전자학회)
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Improved switching transient model suitable for power loss evaluation of SiC-based asymmetric H-bridge power converters in SRGs

  • Cui, Sihang (School of Electrical and Power Engineering, University of Mining and Technology) ;
  • Chen, Hao (School of Electrical and Power Engineering, University of Mining and Technology) ;
  • Liu, Liang (School of Electrical and Power Engineering, University of Mining and Technology) ;
  • Yang, Fan (School of Electrical and Power Engineering, University of Mining and Technology) ;
  • Xu, Shuai (School of Electrical Engineering, Zhengzhou University)
  • Received : 2020.11.30
  • Accepted : 2021.04.01
  • Published : 2021.07.20
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Abstract

This paper presented an improved switching transient model of silicon carbide (SiC)-based asymmetric H-bridge (AHB) power converter for a switched reluctance generator (SRG), which takes the nonlinear phase inductance of the SRG into consideration. First, a systematic mathematic derivation is carried out and the switching transient model is established. Second, the impact of the nonlinear phase inductance of the SRG on switching transients is verified by PSpice & Simulink co-simulations. Third, a power loss model is established by the transient model through PSpice & Simulink co-simulations. The model is conducted to indicate the power loss characteristics of the SiC-based AHB power converter. Simulation results indicate that the nonlinear phase inductance of the SRG is able to accelerate the switching speed of SiC-MOSFETs, and that the SiC converter is advantageous in terms of power loss. Experimental results illustrate that the established power loss model experiences high accuracy. In addition, SiC devices are able to strengthen the power density and efficiency of a converter while reducing its heat dissipation requirements.

Keywords

Acknowledgement

This work is supported by the National Natural Science Foundation of China under Grant 51977209.

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