Acknowledgement
This research was supported by the Samsung Electronics Company, Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Education (2018R1D1A3B0704995213), and the Integrated Circuit Design Education Center (IDEC) in Korea.
References
- R. H. Nixon, S. E. Kemeny, B. Pain, C. O. Staller, and E. R. Fossum, "256 × 256 CMOS active pixel sensor camera-on-a-chip", IEEE J. Solid-State Circuits, Vol. 31, No. 12, pp. 2046-2050, 1996. https://doi.org/10.1109/4.545830
- E. R. Fossum, "CMOS image sensors: electronic camera-on-a-chip", IEEE Trans. Electron Devices, Vol. 44, No. 10, pp. 1689-1698, 1997. https://doi.org/10.1109/16.628824
- M. Bigas, E. Cabruja, J. Forest, and J. Salvi, "Review of CMOS image sensors", Microelectronics J., Vol. 37, No. 5, pp. 433-451, 2006. https://doi.org/10.1016/j.mejo.2005.07.002
- Y. Oike, M. Ikeda, and K. Asada, "A CMOS image sensor for high-speed active range finding using column-parallel time-domain ADC and position encoder", IEEE Trans. Electron Devices, Vol. 50, No. 1, pp. 152-158, 2003. https://doi.org/10.1109/TED.2002.806967
- H. Kwen, S. H. Kim, J. Lee, P. Choi, and J. K. Shin, "Simulation of high-speed and low-power CMOS binary image sensor based on gate/body-tied PMOSFET-type photodetector using double-tail comparator," J. Sens. Sci. Technol., Vol. 29, No. 2, pp. 82-88, 2020. https://doi.org/10.5369/JSST.2020.29.2.82
- H. Kwen, J. Jang, P. Choi, and J. K. Shin, "CMOS binary image sensor using double-tail comparator with high-speed and low-power consumption," J. Sens. Sci. Technol., Vol. 30, No. 2, pp. 82-87, 2021. https://doi.org/10.46670/JSST.2021.30.2.82
- S. Yoshimura, T. Sugiyama, K. Yonemot, and K. Ueda, "A 48kframe/s CMOS image sensor for real-time 3-D sensing and motion detection", Dig. Tech. Pap. - IEEE Int. Solid-State Circuits Conf., Vol. 26, No. 3, pp. 94-95, 2001.
- S. H. Kim, H. Kwen, J. Jang, Y. M. Kim, and J. K. Shin, "2500 fps high-speed binary CMOS image sensor using gate/body-tied type high-sensitivity photodetector," J. Sens. Sci. Technol., Vol. 30, No. 1, pp. 61-65, 2021. https://doi.org/10.46670/JSST.2021.30.1.61
- B. S. Choi, S. H. Kim, J. Lee, C. W. Oh, S. H. Seo, and J. K. Shin, "Complementary metal oxide semiconductor image sensor using gate/body-tied P-channel metal oxide semiconductor field effect transistor-type photodetector for high-speed binary operation", Sensors Mater., Vol. 30, No. 1, pp. 129-134, 2018. https://doi.org/10.18494/SAM.2018.1643
- S. H. Seo, K. D. Kim, M. W. Seo, J. S. Kong, J. K. Shin, and P. Choi, "Optical characteristics of an N-Well/gate-tied PMOSFET-type photodetector with built-in transfer gate for CMOS image sensor", Sensors Mater., Vol. 19, No. 7, pp. 435-444, 2007.
- W. Zhang and M. Chan, "A high gain N-Well/Gate tied PMOSFET image sensor fabricated from a standard CMOS process", IEEE Trans. Electron Devices, Vol. 48, No. 6, pp. 1097-1102, 2001. https://doi.org/10.1109/16.925233
- J. Lee, B. S. Choi, D. Seong, J. Lee, S. H. Kim, J. Lee, J. K. Shin, and P. Choi, "CMOS binary image sensor with gate/body-tied PMOSFET-type photodetector for low-power and low-noise operation," J. Sens. Sci. Technol., Vol. 27, No. 6, pp. 362-367, 2018. https://doi.org/10.5369/JSST.2018.27.6.362