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CMOS binary image sensor with high-sensitivity metal-oxide semiconductor field-effect transistor-type photodetector for high-speed imaging

  • Jang, Juneyoung (School of Electronic and Electrical Engineering, Kyungpook National Unversity) ;
  • Heo, Wonbin (School of Electronic and Electrical Engineering, Kyungpook National Unversity) ;
  • Kong, Jaesung (Korea Polytechnic Robot Campus) ;
  • Kim, Young-Mo (School of Electronic and Electrical Engineering, Kyungpook National Unversity) ;
  • Shin, Jang-Kyoo (School of Electronic and Electrical Engineering, Kyungpook National Unversity)
  • Received : 2021.09.15
  • Accepted : 2021.09.29
  • Published : 2021.09.30

Abstract

In this study, we present a complementary metal-oxide-semiconductor (CMOS) binary image sensor. It can shoot an object rotating at a high-speed by using a gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector. The GBT PMOSFET-type photodetector amplifies the photocurrent generated by light. Therefore, it is more sensitive than a standard N+/P-substrate photodetector. A binary operation is installed in a GBT PMOSFET-type photodetector with high-sensitivity characteristics, and the high-speed operation is verified by the output image. The binary operations circuit comprise a comparator and memory of 1- bit. Thus, the binary CMOS image sensor does not require an additional analog-to-digital converter. The binary CMOS image sensor is manufactured using a standard CMOS process, and its high- speed operation is verified experimentally.

Keywords

Acknowledgement

This research was supported by the Samsung Electronics Company, Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Education (2018R1D1A3B0704995213), and the Integrated Circuit Design Education Center (IDEC) in Korea.

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