한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제34권5호
  • /
  • Pages.364-370
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  • 2021
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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실리카 양 변화에 의한 난연성 실리콘 고무의 유전특성에 관한 연구

A Study on Dielectric Properties of Flame-Retardant Silicone Rubber Due to Silica Amount Change

  • 이성일 (한국교통대학교 안전공학과)
  • Lee, Sung Ill (Department of Safety Engineering, Korea National University of Transportation)
  • 투고 : 2021.07.19
  • 심사 : 2021.08.03
  • 발행 : 2021.09.01
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초록

In this study, the dielectric properties of flame retardant silicone rubber mixed with the amount of silica 50~65 phr were measured at frequencies ranging from 1 to 2.7 MHz and temperature ranges from 30℃ to 160℃. The permittivity decreased with higher frequencies and higher temperatures, and tanδ are thought to have decreased due to the increased heat oxidation of the methyl group bound to Si, which increased the hardness of silicone rubber. FT-IR analysis of specimen mixed with SiO2 of 50~65 phr showed oscillations of OH groups bound to SiO2 between wavenumber 3,600 and 3,300. As a result of analyzing surface components by Energy Dispersive X-ray (EDX) on all specimens mixed with SiO2 of 50 to 65 phr, all specimens contained Si, and the analysis by field emission scanning electron (FE-SEM) confirmed that about 1~5 ㎛ particles were distributed regularly on the surface of the specimens.

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참고문헌

  1. J. M. Zeigler and F. W. Gordon Fearon, Am. J. Hosp. Pharm., 47, (1990). [DOI: https://doi.org/10.1093/ajhp/47.11.2426b]
  2. W. D. Greason and S. Bulach, IEEE Trans. Ind. Appl., 33, 286 (1997). [DOI: https://doi.org/10.1109/28.567133]
  3. T. Seckin, A. Gultek, M. G. Icduygu, and Y. Onal, J. Appl. Polym. Sci., 84, 164 (2002). [DOI: https://doi.org/10.1002/app.10289]
  4. F. Lin, G. S. Bhatia, and J. D. Ford, J. Appl. Polym. Sci., 49, 1901 (1993). [DOI: https://doi.org/10.1002/app.1993.070491105]
  5. J. Y. Lee and H. K. Lee, Mater. Chem. Phys., 85, 410 (2004). [DOI: http://doi.org/10.1016/j.matchemphys.2004.01.032]
  6. K. S. Lee, J. H. Yoo, J. I. Hong, S. T. Lee, Y. W. Kim, and H. S. Jeong, J. Korean Inst. Electr. Electron. Mater. Eng., 20, 25 (2007). [DOI: https://doi.org/10.4313/JKEM.2007.20.1.025]
  7. J. J. Park, Y. B. Park, and J. Y. Lee, Trans. Electr. Electron. Mater., 12, 93 (2011). [DOI: https://doi.org/10.4313/TEEM.2011.12.3.93]