Abstract
Electronic devices used in the mobile environments fabricated under the plasma conditions in high vacuum system. Especially for the development of advanced electronic devices, high quality plasma as the process conditions are required. For this purpose, the variable conductance throttle valves for controllable plasma employed to the high vacuum system. In this study, we analyzed the effects of throttle valve applications on vacuum characteristics simulated to obtain the optimum design modelling for plasma conditions of high vacuum system. We used commercial simulator of vacuum system, VacSim(multi) on this study. Reliability of simulator verified by simulation of the commercially available models of high vacuum system. Simulated vacuum characteristics of the proposed modelling agreed with the observed experimental behaviour of real systems. Pressure limit valve and normally on-off control valve schematized as the modelling of throttle valve for the constant process-pressure of below 10-3 torr. Simulation results plotted as pump down curve of chamber, variable valve conductance and conductance logic of throttle valve. Simulated behaviors showed the applications of throttle valve sustained the process-pressure constantly, stably, and reliably in plasma process.