반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

PVP GQD / HfOx 구조를 갖는 전도성 필라멘트 기반의 저항성 스위칭 소자 특성

Characterization of Resistive Switching in PVP GQD / HfOx Memristive Devices

  • 황성원 (상명대학교 시스템반도체공학과)
  • Hwang, Sung Won (Department of System Semiconductor Engineering, Sangmyung University)
  • 투고 : 2021.03.15
  • 심사 : 2021.03.17
  • 발행 : 2021.03.31
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초록

A composite active layer was designed based on graphene quantum dots, which is a low-dimensional structure, and a heterogeneous active layer of graphene quantum dots was applied to the interfacial defect structure to overcome the limitations. Increasing to 1.5~3.5 wt % PVP GQD, Vf changed from 2.16 ~ 2.72 V. When negative deflection is applied to the lower electrode, electrons travel through the HfOx/ITO interface. The Al + ions are reduced and the device dominates at low resistance. In addition, as the PVP GQD concentration increased, the depth of the interfacial defect decreased, and the repetition of appropriate electrical properties was confirmed through Al and HfOx/ITO. The low interfacial defects help electrophoresis of Al+ ions to the PVP GQD layer and the HfOx thin film. A local electric field increase occurred, resulting in the breakage of the conductive filament in the defect.

키워드

참고문헌

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