전기전자학회논문지 (Journal of IKEEE)

  • 제25권4호
  • /
  • Pages.735-740
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  • 2021
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  • 1226-7244(pISSN)
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  • 2288-243X(eISSN)
한국전기전자학회 (Institute of Korean Electrical and Electronics Engineers)
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Parallel NPN BJT로 인한 높은 홀딩 전압을 갖는 SCR 기반 양방향 ESD 보호 소자에 관한 연구

A study on SCR-based bidirectional ESD protection device with high holding voltage due to parallel NPN BJT

  • Jung, Jang-Han (Dept. of Electronics Engineering, Dankook University) ;
  • Woo, Je-Wook (Dept. of Electronics Engineering, Dankook University) ;
  • Koo, Yong-Seo (Dept. of Electronics Engineering, Dankook University)
  • 투고 : 2021.12.20
  • 심사 : 2021.12.29
  • 발행 : 2021.12.31
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초록

본 논문에서는 기존의 LTDDSCR의 구조를 개선하여 기생 NPN BJT의 낮은 전류이득으로 높은 홀딩전압을 갖는 새로운 ESD 보호 소자를 제안한다. 제안된 보호 소자는 Synopsys사의 TCAD simulation을 이용하여 HBM simulation으로 전기적 특성을 분석하였고 current flow와 impact ionization 및 recombination Simulation으로 추가된 BJT가 동작하는 것을 확인하였다. 또한, 설계변수 D1, D2로 홀딩전압 특성을 최적화하였다. Simulation 수행결과, 새로운 ESD 보호 소자는 기존의 LTDDSCR과 비교하여 높은 홀딩전압을 갖는 것이 검증되었고 대칭적인 양방향 특성을 갖는 것이 확인되었다. 따라서 제안된 ESD 보호 소자는 IC에 적용될시 높은 면적 효율성을 가지며 IC의 신뢰성을 향상시킬 것으로 기대된다.

In this paper, we propose a new ESD protection device with high holding voltage with low current gain of parasitic NPN BJT by improving the structure of the existing LTDDSCR. The electrical characteristics of the proposed protection device were analyzed by HBM simulation using Synopsys' TCAD simulation, and the operation of the added BJT was confirmed by current flow, impact ionization and recombination simulation. In addition, the holding voltage characteristics were optimized with the design variables D1 and D2. As a result of the simulation, it was verified that the new ESD protection device has a higher holding voltage compared to the existing LTDDSCR and has a symmetrical bidirectional characteristic. Therefore, the proposed ESD protection device has high area efficiency when applied to an IC and is expected to improve the reliability of the IC.

키워드

과제정보

This research was supported by the MSIT(Ministry of Science and ICT), Korea, under the ITRC(Information Technology Research Center) support program(IITP-2020-2018-0-01421) supervised by the IITP(Institute for Information & Communications Technology Planning & Evaluation). This work was supported by the National Research Foundation of Korea(NRF) grant funded by the Korea government Ministry of Education(NRF-2021R1F1A1049866)

참고문헌

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