Current Photovoltaic Research

  • 제8권3호
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  • Pages.102-106
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  • 2020
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  • 2288-3274(pISSN)
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  • 2508-125X(eISSN)
한국태양광발전학회 (Korea Photovoltaic Society)
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MoSe2가 Cu(In,Ga)Se2 박막 태양전지 모듈의 ZnO/Mo 접합의 접촉 저항에 미치는 영향

Effect of MoSe2 on Contact Resistance of ZnO/Mo Junction in Cu(In,Ga)Se2 Thin Film Solar Module

  • 조성욱 (화학공학과, 영남대학교) ;
  • 김아현 (화학공학과, 영남대학교) ;
  • 이경아 (화학공학과, 영남대학교) ;
  • 전찬욱 (화학공학과, 영남대학교)
  • Cho, Sung Wook (Department of Chemical Engineering, Yeoungnam University) ;
  • Kim, A Hyun (Department of Chemical Engineering, Yeoungnam University) ;
  • Lee, Gyeong A (Department of Chemical Engineering, Yeoungnam University) ;
  • Jeon, Chan Wook (Department of Chemical Engineering, Yeoungnam University)
  • 투고 : 2020.07.09
  • 심사 : 2020.08.14
  • 발행 : 2020.09.30
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초록

In this paper, the effect of MoSe2 on the contact resistance (RC) of the transparent conducting oxide (TCO) and Mo junction in the scribed P2 region of the Cu(In,Ga)Se2 (CIGS) solar module was analyzed. The CIGS/Mo junction becomes ohmic-contact by MoSe2, so the formation of the MoSe2 layer is essential. However, the CIGS solar module has a TCO/MoSe2/Mo junction in the P2 region due to structural differences from the cell. The contact resistance (RC) of the P2 region was calculated using the transmission line method, and MoSe2 was confirmed to increase RC of the TCO/Mo junction. B doped ZnO (BZO) was used as TCO, and when BZO/MoSe2 junction was formed, conduction band offset (CBO) of 0.6 eV was generated due to the difference in their electron affinities. It is expected that this CBO acts as a carrier transport barrier that disturbs the flow of current, resulting in increased RC. In order to reduce the RC caused by CBO, MoSe2 must be made thin in a CIGS solar module.

키워드

참고문헌

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