DOI QR코드

DOI QR Code

A Study on Frequency Dependence on Dielectric Properties of Silicone Rubber Sheets

실리콘 고무 시트의 유전특성에 미치는 주파수 의존성에 관한 연구

  • Lee, Sung Ill (Department of Safety Engineering, Korea National University of Transportation)
  • 이성일 (한국교통대학교 안전공학과)
  • Received : 2020.06.25
  • Accepted : 2020.07.29
  • Published : 2020.09.01

Abstract

In this study, the following results were obtained by analysis of electric properties with FT-IR, DSC, XRD, and SEM, in the range of temperature 30~160℃ and frequency 0.1~200 kHz, when filling agent (0~100 phr) and silicone oil (0~12 phr) were added to raw silicone rubber. In the case of 100 phr mixed samples, the relative dielectric constant εr gradually decreased from 4.3 to 3.96 as frequency increased, and the dielectric loss tan δ decreased to 0.01 at 300 Hz, then increased to 0.022 at 30 kHz, then decreased to 200 kHz. The FT-IR analysis identified the same binding structure according to the chemical composition of added silica (SiO2). Through DSC analysis, we could determine the change of heat quantity and the glass transition temperature of each specimen. In the XRD analysis, it was found that the images SiO2, TiO2, and Fe2O3 appeared for specimens with 0%, 50% and 100% filling agent. Finally, the SEM analysis confirmed that particles of 0.5 to 1.5 ㎛ size with silica (SiO2) mixing were dispersed evenly.

Keywords

References

  1. J. M. Zeigler and F.W.G. Fearon, Silicone-Based Polymer Science: A Comprehensive Resource (American Chemical Society, Washington, 1990) p. 47.
  2. W. D. Greason and S. Bulach, IEEE Trans. Ind. Appl., 33, 286 (1997). [DOI: https://doi.org/10.1109/28.567133]
  3. J. J. Park, J. Korean Inst. Electr. Electron. Mater. Eng., 29, 565 (2016). [DOI: https://doi.org/10.4313/JKEM.2016.29.9.565]
  4. J. Montesinos, R. S. Gorur, L. Zimmer, and N. F. Hubele, IEEE Trans. Dielectr. Electr. Insul., 7, 408 (2000). [DOI: https://doi.org/10.1109/94.848927]
  5. S. Kumagal and N. Yoshimura, IEEE Trans. Dielectr. Electr. Insul., 7, 424 (2000). [DOI: https://doi.org/10.1109/94.848931]
  6. K. Lee, J. Yoo, J. Hong, S. Lee, Y. Kim, and H. Jeong, J. Korean Inst. Electr. Electron. Mater. Eng., 20, 25 (2007). https://doi.org/10.4313/JKEM.2007.20.1.025
  7. J. K. Park, W. S. Lee, and J. H. Han, J. Korean Inst. Electr. Electron. Mater. Eng., 14, 397 (2001).