DOI QR코드

DOI QR Code

Development of charge sensitive amplifiers based on various circuit board substrates and evaluation of radiation hardness characteristics

  • Jeong, Manhee (Department of Nuclear and Energy, Jeju National University) ;
  • Kim, Geehyun (Department of Nuclear Engineering, Sejong University)
  • Received : 2019.08.12
  • Accepted : 2019.12.10
  • Published : 2020.07.25

Abstract

Ultra-low noise charge sensitive amplifiers (CSAs) based on various types of circuit board substrates, such as FR4, Teflon, and ceramics (Al2O3) with two different designs, PA1 and PA2, have been developed. They were tested to see the noise effect from the dielectric loss of the substrate capacitance before and after irradiation. If the electronic noise from the CSAs is to be minimized and the energy resolution enhanced, the shaping time has to be optimized for the detector, and a small feedback capacitance of the CSA is favorable for a better SNR. Teflon- and ceramic-based PA1 design CSAs showed better noise performance than the FR4-based one, but the Teflon-based PA1 design showed better sensitivity than ceramic based one at a low detector capacitance (<10 pF). In the PA2 design, the equivalent noise and the sensitivity were 0.52 keV FWHM for a silicon detector and 7.2 mV/fC, respectively, with 2 ㎲ peaking time and 0.1 pF detector capacitance. After 10, 100, 103, 104, and 105 Gy irradiation the ENC and sensitivity characteristics of the developed CSAs based on three different substrate materials are also discussed.

Keywords

References

  1. P.W. Nicholson, Nuclear Electronics, John Wiley & Sons, Inc., London, UK, 1974, pp. 44-118.
  2. H. Spieler, Low noise electronics in practical applications, Nucl. Instrum. Methods A 636 (2011) S149-S154. https://doi.org/10.1016/j.nima.2010.04.100
  3. H. Spieler, Semiconductor Detector Systems, Oxford Univ. Press, 2005, pp. 91-100.
  4. I. Kwon, Integrated Circuit Design for Radiation Sensing and Hardening, Ph.D. Thesis, University of Michigan, Ann Arbor, MI-48109, USA, 2015.
  5. G. Cesura, V. Re, A. Tomasini, Radiation sensitivity of noise in monolithic JFET circuits exposed to $^{60}Co\;{\gamma}-rays$, Nucl. Phys. B 32 (1993) 546-554. https://doi.org/10.1016/0920-5632(93)90070-M
  6. V. Radeka, S. Rescia, P. Manfredi, V. Speziali, F. Svelto, JFET monolithic preamplifier with outstanding noise behaviour and radiation hardness characteristics, IEEE TNS 40 (4) (1993) 744-749.
  7. W. Buttler, B. Hosticka, G. Lutz, P. Manfredi, A JFET-CMOS radiation-tolerant charge-sensitive preamplifier, IEEE J. Solid State Circuits 25 (4) (1990) 1022-1024. https://doi.org/10.1109/4.58299
  8. eV-509x datasheet, Kromek, Available online, http://www.kromek.com/index.php/products/applications/research/preamplifiers. (Accessed 7 July 2017).
  9. IEEE standard test procedures for amplifiers and preamplifiers used with detectors of ionizing radiation, IEEE Standard 301 (1988) 1988.
  10. Nuclear Instrumentation-Amplifiers and preamplifiers used with detectors of ionizing radiation- Test procedures, CEI/IEC (1992) 1992, 61151.
  11. Test Procedures for Amplifiers and Charge-Sensitive Preamplifiers Used with Detectors of Ionizing Radiation, 1994. GB/T 4079-94.
  12. K. Mori, Charge sensitive amplifier-the state of arts-, KEK Proceedings 4 (1996) 50-76.
  13. M. Morgen, E. Ryan, J. Zhao, C. Hu, T. Cho, p. Ho, Low dielectric constant materials for ULSI interconnects, Annu. Rev. Mater. Sci. 30 (2000) 645-680. https://doi.org/10.1146/annurev.matsci.30.1.645
  14. M. Jeong, Delay-Line 3D Position Sensitive Radiation Detection, Ph.D. Thesis, University of Michigan, Ann Arbor, MI-48109, USA, 2012.
  15. J. Hong, M. Lancaster, Microstrip Filters for RF/Microwave Applications, John Wiley & Sons, Inc., New York, USA, 2001, pp. 29-76.
  16. K. Hashimoto, K. Niwa, Effect of Dielectric Constant on of Transmission lines formed in multilayer ceramic circuit boards, Electron. Commun. Jpn. 72 (Part 2) (1989) 339-344.
  17. M. Jeong, W. Jo, H. Kim, J. Ha, Radiation hardness characteristics of Si-PIN radiation detectors, Nucl. Instrum. Methods A 784 (2015) 119-123. https://doi.org/10.1016/j.nima.2014.11.013