Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
권호 표지
DOI QR코드

DOI QR Code

Electrical and optical properties of ZnO:Al transparent conductive films with thermal treatments

ZnO:Al 투명도전막의 열처리에 따른 전기적 및 광학적 특성

  • Ma, Tae Young (Dept. of Electrical Engineering & ERI, Gyeongsang National University) ;
  • Park, Ki Cheol (Dept. of Semiconductor Engineering & ERI, Gyeongsang National University)
  • Received : 2020.03.20
  • Accepted : 2020.06.09
  • Published : 2020.06.30
Download PDF
⟨ Previous Next ⟩

Abstract

ZnO:Al films with about 500 nm thick were prepared by RF magnetron sputtering. The ZnO:Al films were annealed at 100 ℃, 200 ℃, 300 ℃, and 400 ℃ for 10 h, respectively. The resistivity, carrier concentration, and mobility variation of ZnO:Al films with heat treatments were measured. The causes of the resistivity variation of ZnO:Al films with heat treatments were investigated by utilizing the results of x-ray diffraction and field emission scanning electron microscope. The energy band gap, Urbach energy, and refractive index were obtained from the transmittance of ZnO:Al films. The change in electrical properties of the ZnO:Al film was explained in relation to the optical properties.

고주파 마그네트론 스퍼터링으로~500 nm 두께의 ZnO:Al막을 증착하였다. 증착된 ZnO:Al막을 100 ℃, 200 ℃, 300 ℃ 및 400 ℃에서 10시간 동안 열처리하였다. ZnO:Al막의 열처리에 따른 저항률, 캐리어 농도 및 이동도 변화를 측정하였다. XRD, FESEM 결과를 통해 열처리에 따른 ZnO:Al막의 저항률 변화 원인을 조사하였다. ZnO:Al막의 광 투과율을 측정한 후 에너지 밴드 갭, Urbach 에너지 및 굴절률을 도출하였다. ZnO:Al막의 전기적 특성 변화를 광특성과 연관지어 설명하였다.

Keywords

References

  1. Minh Trung Dang, Guillaume Wantz, Lionel Hirsch, James D. Wuest, "Recycling indium tin oxide (ITO) anodes for use in organic light-emitting diodes (OLEDs)," Thin Solid Films, vol. 63830, pp. 236-243, 2017. DOI: 10.1016/j.tsf.2017.07.045
  2. Masayuki Okuya, Nobuyuki Ito, Katsuyuki Shiozaki, "ITO thin films prepared by a microwave heating," Thin Solid Films, Vol.515, pp.8656-8659, 2007. DOI: 10.1016/j.tsf.2007.03.148
  3. H. Zhu, E. Bunte, J. Hupkes, S. M. Huang, "Sputtering of ZnO:Al films from dual tube targets with tilted magnetrons," Thin Solid Films, vol.519, pp.2366-2370, 2011. DOI: 10.1016/j.tsf.2010.10.072
  4. H. Zhu, J. Hupkes, E. Bunte, A. Gerber, S. M. Huang, "Influence of working pressure on ZnO:Al films from tube targets for silicon thin film solar cells," Thin Solid Films, vol.518, pp.4997-5002, 2010. DOI: 10.1016/j.tsf.2010.02.065
  5. E. Ziegler A. Heinrich H. Oppermann G. Stover, "Electrical properties and non-stoichiometry in ZnO single crystals," Phys. Status Solidi A, vol.66, pp.635, 1981. DOI: 10.1002/pssa.2210660228
  6. E. Burstein, "Anomalous Optical Absorption Limit in InSb," Phys. Rev. vol.93, pp.6322015, 1954. DOI: 10.1103/PhysRev.93.632
  7. R Grigorovici, "Amorphous semiconducting thin films," Thin Solid Films, vol.9, pp.1-23, 1972. DOI: 10.1016/0040-6090(72)90327-6
  8. R. Swanepoel, "Determination of the thickness and optical constants of amorphous silicon," J. Phys. E: Sci. Instrum. vol.16, pp.1214-1222, 1983. DOI: 10.1088/0022-3735/16/12/023