한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제33권2호
  • /
  • Pages.141-146
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  • 2020
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Bi2Te3계 열전박막의 열전 출력인자에 미치는 첨가제의 영향

Doping Effects to the Thermoelectric Power Factor of Bi2Te3 Thin Films

  • 배상현 (한국기술교육대학교 에너지신소재화학공학부) ;
  • 최순목 (한국기술교육대학교 에너지신소재화학공학부)
  • Bae, Sang Hyun (School of Energy, Materials and Chemical Engineering, Korea University of Technology and Education) ;
  • Choi, Soon-Mok (School of Energy, Materials and Chemical Engineering, Korea University of Technology and Education)
  • 투고 : 2019.09.24
  • 심사 : 2019.10.22
  • 발행 : 2020.03.01
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초록

Thermoelectric Bi2Te3 thin films were synthesized by a co-sputtering method at 300℃. A Fe dopant was considered to enhance the thermoelectric properties of the system. The Seebeck coefficient of the Fe-doped films increased whereas the electrical conductivity decreased. As a result, the power factor of the system increased owing to the enhanced Seebeck coefficient. Grain growth inhibition was detected in the Fe-doped system, which produced more grain boundaries in the Fe-doped films than in the undoped system. The increased grain boundary scattering was deemed to be effective for a reduced thermal conductivity. This is advantageous for the preparation of high-performance thermoelectric films.

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