한국재료학회지 (Korean Journal of Materials Research)

  • 제30권12호
  • /
  • Pages.660-665
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  • 2020
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  • 1225-0562(pISSN)
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  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
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실리콘 전하선택접합 태양전지 적용을 위한 원자층 증착법으로 증착된 VOx 박막의 특성

Characteristics of Vanadium Oxide Grown by Atomic Layer Deposition for Hole Carrier Selective Contacts Si Solar Cells

  • 박지혜 (충남대학교 에너지과학기술대학원) ;
  • 장효식 (충남대학교 에너지과학기술대학원)
  • Park, Jihye (Graduate School of Energy Science and Technology, Chungnam National University) ;
  • Chang, Hyo Sik (Graduate School of Energy Science and Technology, Chungnam National University)
  • 투고 : 2020.09.29
  • 심사 : 2020.10.21
  • 발행 : 2020.12.27
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초록

Silicon heterojunction solar cells can achieve high conversion efficiency with a simple structure. In this study, we investigate the passivation characteristics of VOx thin films as a hole-selective contact layer using ALD (atomic layer deposition). Passivation characteristics improve with iVoc (implied open-circuit voltage) of 662 mV and minority carrier lifetime of 73.9 µs after post-deposition annealing (PDA) at 100 ℃. The improved values are mainly attributed to a decrease in carbon during the VOx thin film process after PDA. However, once it is annealed at temperatures above 250 ℃ the properties are rapidly degraded. X-ray photoelectron spectroscopy is used to analyze the chemical states of the VOx thin film. As the annealing temperature increases, it shows more formation of SiOx at the interface increases. The ratio of V5+ to V4+, which is the oxidation states of vanadium oxide thin films, are 6:4 for both as-deposition and annealing at 100 ℃, and 5:5 for annealing at 300 ℃. The lower the carbon content of the ALD VOx film and the higher the V5+ ratio, the better the passivation characteristics.

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