References
- D. Y. Jung et al., Power semiconductor SMD package embedded in multilayered ceramic for low switching loss, ETRI J. 39 (2017), 866-873. https://doi.org/10.4218/etrij.17.0117.0113
- D. Y. Jung et al., Multi-layer substrate based power semiconductor package for low parasitic inductance and high heat transfer, in Asia-Pacific Workshop Fundam. Applicat. Adv. Semicond. Devices (AWAD), Hakodate, Japan, July 2016, pp. 283-285.
- A. Ball et al., System design of 3D integrated non-isolated point of load converter, in Annu. IEEE Appl. Power Electron. Conf. Exposition, Austin, TX, USA, Feb. 2008, pp. 181-186, doi: 10.1109/APEC.2008.4522719.
- Q. Li et al., High inductance density low-profile inductor structure for integrated point-of-load converter, in Annu. IEEE Appl. Power Electron. Conf. Exposition, Washington, DC, USA, Feb. 2009, pp. 1011-1017, doi: 10.1109/APEC.2009.4802786.
- Q. Li, Y. Dong, and F. C. Lee, High-density low-profile coupled inductor design for integrated point-of-load converters, IEEE Trans. Power Electron. 28 (2013), 547-554. https://doi.org/10.1109/TPEL.2012.2196525
- Y. Su et al., Low profile LTCC inductor substrate for multi-MHz integrated POL converter, in Annu. IEEE Appl. Power Electron. Conf. Exposition (APEC), Orlando, FL, USA, Feb. 2012, pp. 1331-1337, doi: 10.1109/APEC.2012.6165992.
- C. Nan, and R Ayyanar, A 1MHz bi-directional soft-switching DCDC converter with planar coupled inductor for dual voltage automotive systems, in IEEE Appl. Power Electron. Conf. Exposition (APEC), Long Beach, CA, USA, Mar. 2016, pp. 432-439, doi: 10.1109/APEC.2016.7467908.
- T. Kim and S. Kwak, A flexible voltage bus converter for the 48-/12-V dual supply system in electrified vehicles, IEEE Trans. Veh. Technol. 66 (2017), 2010-2018. https://doi.org/10.1109/TVT.2016.2570817
- B. Li et al., A high frequency high efficiency GaN based bi-directional 48V/12V converter with PCB coupled inductor for mild hybrid vehicle, in IEEE Workshop Wide Bandgap Power Devices Applicat., Atlanta, GA, USA, 2018, pp. 204-211, doi: 10.1109/WiPDA.2018.8569067.
- M. H. Ahmed et al., 48-V voltage regulator module with PCB winding matrix transformer for future data centers, IEEE Trans. Ind. Electron. 64 (2017), 9302-9310. https://doi.org/10.1109/TIE.2017.2711519
- D. Reusch, S. Biswas, and Y. Zhang, System optimization of a high power density non-isolated intermediate bus converter for 48 V server applications, in E Appl. Power Electron. Conf. Exposition, San Antonio, TX, USA, Mar. 2018, pp. 2191-2197, doi: 10.1109/APEC.2018.8341320.
- C. Fei et al., Two-stage 48 V-12 V/6 V-1.8 V voltage regulator module with dynamic bus voltage control for light-load efficiency improvement, IEEE Trans. Power Electron. 32 (2017), 5628-5636. https://doi.org/10.1109/TPEL.2016.2605579
- B. Hughes et al., Increasing the switching frequency of GaN HFET converters, in IEEE Int. Electr. Devices Meeting (IEDM), Washington, DC, USA, Dec. 2015, pp. 16.7.1-16.7.4.
- R. Mitovaet al., Current trends for GaN on Si power devices for industrial applications, in Int. Conf. Integr. Electron. Syst. (CIPS), Nuremberg, Germany, Mar. 2016, pp. 1-11.
- W. Zhang et al., A new package of high-voltage cascode gallium nitride device for megahertz operation, IEEE Trans. Power Electron. 31 (2016), 1344-1353. https://doi.org/10.1109/TPEL.2015.2418572
- I. Omura et al., Gallium nitride power HEMT for high switching frequency power electronics, in Int. Workshop Phys. Semicond. Devices, Mumbai, India, Dec. 2007, pp. 781-786.
- D. Y. Jung et al., Design and evaluation of cascode GaN FET for switching power conversion systems, ETRI J. 39 (2017), 62-68. https://doi.org/10.4218/etrij.17.0116.0173
- M. Kim et al., Pulse-mode dynamic Ron measurement of large-scale high-power AlGaN/GaN HFET, ETRI J. 39 (2017), 292-299. https://doi.org/10.4218/etrij.17.0116.0385
- W. Zhang et al., High frequency high current point of load modules with integrated planar inductors, in IEEE Electron. Compon. Technol. Conf. (ECTC), Orlando, FL, USA, May 2014, pp. 504-511, doi: 10.1109/ECTC.2014.6897331
- D. Han, and B. Sarlioglu, Deadtime effect on GaN-based synchronous boost converter and analytical model for optimal deadtime selection, IEEE Trans. Power Electron. 31 (2016), 601-612. https://doi.org/10.1109/TPEL.2015.2406760
- J. Wang, Y. Li, and Y. Han, Integrated modular motor drive design with GaN power FETs, IEEE Trans. Ind. Applicat. 51 (2015), 3198-3207. https://doi.org/10.1109/TIA.2015.2413380
Cited by
- Noise mitigation in 12‐to‐5 V DC‐DC converter using an embedded metal layout strategy vol.16, pp.9, 2019, https://doi.org/10.1002/tee.23427