References
- R. Tsu, "Silicon-based quantum wells," Nature (London), vol.364, p.19, 1993. DOI: 10.1038_364019a0 https://doi.org/10.1038/364019b0
- Raphael Tsu, Qui-Yi Ye, and Edward H. Nicollian "Resonant tunneling in microcrystalline silicon quantum box diode," Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, p.232. 1991. DOI: 10.1117/12.24358
- S. Y. Chou and A. E. Gordon, "Steps and spikes in current-voltage characteristics of oxide/microcrystallite silicon/oxide diodes," Appl. Phys. Lett., vol.60, no.15, p.1827, 1992. DOI: 10.1063/1.107177
- Y. J. Seo, J. C. Lofgrene and R. Tsu, "Transport through a nine period silicon/oxygen superlattice," Appl. Phys. Lett., vol.79, no.6, pp.788-790, 2001. DOI: 10.1063/1.1394162
- Y. J. Seo and R. Tsu, "Electrical and optical characteristics of multilayer nanocrystalline silicon/adsorbed oxygen superlattice," Jpn. J. Appl. Phys., vol.40, no.8, pp.4799-4801, 2001. DOI: 10.1143/JJAP.40.4799
- K. Dovidenko, J. C. Lofgren, F. de Freitas, Y. J. Seo, and R. Tsu, "Structure and optoelectronic properties of Si/O superlattice," Physica E, vol.16, pp.509-516, 2003. DOI: 10.1016/S1386-9477(02)00631-8
- Y. J. Seo and R. Tsu, "Epitaxially grown multilayer nanocrystalline Si-O structure for silicon-on-insulator applications," J. Korean Phys. Soc., vol.45, no.1, pp.120-123, 2004. DOI: 10.3938/jkps.45.120
- R. Tsu, A. Filios, J. C. Lofgrene, J. L. Ding, Q. Zhang, J. Morais, and C. G. Wang, "Quantum confinement in silicon," Electrochem Soc. Proc., vol.97-11, pp.341-350, 1997. ISBN: 1-56677-138-2.
- D. N. Chen and Y. C. Cheng, "A new model for dielectric-breakdown phenomenon in silicon dioxide films," J. Appl. Phys., vol.61, p.1592, 1987. DOI: 10.1063/1.338096
- L. Esaki and L. L. Chang, "New phenomenon in a semiconductor; Superlattice," Phys. Rev. Lett., vol.33, p.495, 1974. DOI: 10.1103/PhysRevLett.33.495
- U. Meirav, M. A. kastner, and S. J. Wind, "Single-electron charging and periodic conductance resonances in GaAs nanostructures," Phys. Rev. Lett., vol.65, p.771, 1990. DOI: 10.1103/PhysRevLett.65.771
- Y. Lin, A. D. van Rheenen, and S. Y. Chou, "Current fluctuations in double-barrier quantum well resonant tunneling diodes," Appl. Phys. Lett., vol.59, p.1105, 1991. DOI: 10.1063/1.106358
- R. Tsu, "Challenges in nanoelectronics," Nanotechnology, vol.12, no.4, pp.625-628, 2001. DOI: 10.1088/0957-4484/12/4/351