전력전자 시스템에서 신뢰성 취약 소자의 상태 모니터링 방법

Condition Monitoring of Reliability-Critical Components in Power Electronic Systems

Abstract

The reliability of power electronic systems becomes increasingly important, as power electronic systems have gradually gained an essential status in a wide range of industrial applications. Accordingly, recent research has made an effort to improve the reliability of power electronic systems to comply with stringent constraints on safety, cost, and availability. The condition monitoring of power electronic components is one of the main topics in the research area of the reliability of power electronic systems. In this paper, condition-monitoring methods of reliability-critical components in power electronic systems are discussed to provide the current state of knowledge by organizing and evaluating current representative literature.

Fig. 1. General structure of power electronic systems connected to a source and load.

Fig. 2. Survey result on reliability-critical components in power electronic systems^[3].

Fig. 3. Structure and package-related failure mechanism of a standard IGBT module^[4].

Fig. 4. Variation of V_{CE_ON} due to failure in bond-wires of IGBT module^[7].

Fig. 5. Simplified model of capacitor^[9].

Fig. 6. Separation of metal film from heavy edge by corrosion^[14].

Fig. 7. Offline measurement by voltage clamping circuit using a zener diode (a) V_{CE_ON} measurement circuit, (b) V_{CE_ON} measurement points^[19],[20].

Fig. 8. Offline measurement with a reed relay^[21],[22] (a) Measurement circuit with additional leg and inductor, (b) Measurement circuit for 3-phase inverter, (c) Switching sequence for V_{CE_ON} measurement.

Fig. 9. V_{CE_ON} measurement circuit with parallel connected MOSFET^[23].

Fig. 10. V_{CE_ON} measurement circuit using double diodes^[24],[25].

Fig. 11. V_{CE_ON} measurement circuit using a depletion mode MOSFET^[22].

Fig. 12. V_{CE_ON} as a function of current level and junction temperature for a preliminary calibration^[28].

Fig. 13. K-factors depending on current levels (a) NTC region, (b) PTC region^[28].

Fig. 14. V_{CE_ON} of an IGBT as a function of temperature under different injected low currents^[30].

Fig. 15. R_Gint of an IGBT inside an Infineon FS200R12PT4 module under different temperatures^[33].

Fig. 16. Simplified gate circuit with gate voltage before the threshold voltage is reached^[33],[34].

Fig. 17. V_{RGext_peak} detector^[33],[34].

Fig. 18. V_{RGext_peak} measure by peak detector under different temperatures^[33],[34].

Fig. 19. Preliminary calibration circuit^[36].

Fig. 20. Junction temperature vs. short-circuit current(ISC)^[36].

Fig. 21. Circuit schematic and device waveforms for the junction temperature estimation in a three-phase inverter^[36] (a) Circuit schematic, (b) IGBT waveform.

Fig. 22. Impedance characteristic of electrolytic capacitor^[9].

Fig. 23. Experimental setup with AC signal injection^[39].

Fig. 24. ESR estimation based on ripple current and ripple voltage of capacitor by using typical current sensor^[42].

Fig. 25. ESR estimation based on AC power losses of capacitor by using rogowski coil current sensor^[43].

Fig. 26. Control block diagram of AC/DC converter with condition monitoring of DC-link capacitor^[44].

Fig. 27. Behavior of the DC-link current and voltage according to gating pulses^[44] (a) Switching state of upper switches, (b) Relation of phase currents.

Fig. 28. Inverter system with currents for the explanation of the principle of capacitor condition monitoring^[46].

Fig. 29. Structure of ANN for capacitance estimation^[49].

TABLE I COEFFICIENT OF THERMAL EXPANSION (CTE) OF DIFFERENT MATERIALS IN IGBT MODULE^[5]

TABLE II FAILURES OF THREE TYPES OF CAPACITORS^[8]

TABLE III TYPICAL END-OF-LIFE CRITERIA OF THREE TYPES OF CAPACITORS^[8]

TABLE IV CURRENT OF i5 DEPENDING ON INVERTER SWITCHING STATES^[46]