Fig. 1. FE-SEM images of as-deposited VOx thin films on SiO2(300 nm)/Si substrates with RF power (a) 100 watt, (b) 200 watt (c) 300 watt deposited at 500 °C substrate temperature.
Fig. 2. Raman spectra of as-deposited VOx thin films on SiO2(300 nm)/Si substrates with RF power (a) 100 watt, (b) 200 watt (c) 300 watt deposited at 500 °C substrate temperature.
Fig. 3. Optical (a) absorption and (b) transmittance of as-deposited VOx thin films on quartz substrates for different RF power of 100 watt, 200 watt, and 300 watt, respectively.
Fig. 4. Cyclic performance of VOx thin films for different RF power of 100 watt, 200 watt, and 300 watt, respectively.
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