Fig. 1. Simple block diagram of a typical CMOS power amplifier using transformers as an output balun.
Fig. 2. Typical structure of an on-chip transformer.
Fig. 3. Proposed on-chip transformer using the auxiliary primary part.
Fig. 4. Maximum available gains of the typical and proposed transformers according to the operating frequency (length of primary and secondary part: 1.0 mm).
Fig. 5. Maximum available gains of the typical and proposed transformers according to WA (length of the primary and secondary part: 1.0 mm).
참고문헌
- J. Park, C. Lee, and C. Park, "A Brief Review: Stage-Convertible Power Amplifier using Differential Line Inductor," Wirel. Eng. Technol., vol.3, no.4, pp.189-194, 2012. DOI: 10.4236/wet.2012.34027
- Y. Kim, C. Park, H. Kim, and S. Hong, "CMOS RF power amplifier with reconfigurable transformer," Electron. Lett., vol.42, no.7, pp.405-407, 2006. DOI: 10.1049/el:20060237
- I. Aoki, S. D. Kee, D. B. Rutledge, and A. Hajimiri, "Distributed active transformer-A new power-combining and impedance-transformation technique," IEEE Trans. Microw. Theory Tech., vol.50, no.1, pp.316-331, 2002. DOI: 10.1109/22.981284
- J.-S. Paek and S. Hong, "A 29 dBm 70.7% PAE Injection-Locked CMOS Power Amplifier for PWM Digitized Polar Transmitter," IEEE Microw. Wirel. Compon. Lett., vol.20, no.11, pp. 637-639, 2010. DOI: 10.1109/LMWC.2010.2071858
- K. H. An, O. Lee, H. Kim, D. H. Lee, J. Han, K. S. Yang, Y. Kim, J. J. Chang, W. Woo, C.-H. Lee, H. Kim, and J. Laskar, "Power-Combining Transformer Techniques for Fully-Integrated CMOS Power Amplifiers," IEEE J. Solid-State Circuits, vol.53, no.5, pp.1064-1075, 2008. DOI: 10.1109/JSSC.2008.920349
- C. Park and C. Seo, "CMOS Class-E Power Amplifier (1.8-GHz) with an Additional Thin-Film Technology," IET Circ. Devices Syst., vol.4, no.6, pp.479-485, 2010. DOI: 10.1049/iet-cds.2010.0014
-
H.-Y. Chung, C.-W. Kuo, and H.-K. Chiou, "A Full X-Band Power Amplifier with an Integrated Guanella-Type Transformer and a Predistortion Linearizer in
$0.18-{\mu}m$ CMOS," Microw. Opt. Technol. Lett., vol.55, no.9, pp.2229-2232, 2013. DOI: 10.1002/mop.27804