Effect of Substrate Temperature and Growth Duration on Palladium Oxide Nanostructures

팔라듐 옥사이드 나노구조물의 성장에서 기판 온도와 성장 시간의 효과

  • Kim, Jong-Il (Department of Advanced Chemical Engineering, Mokwon University) ;
  • Kim, Ki-Chul (Department of Advanced Chemical Engineering, Mokwon University)
  • 김종일 (목원대학교 신소재화학공학과) ;
  • 김기출 (목원대학교 신소재화학공학과)
  • Received : 2019.02.08
  • Accepted : 2019.04.05
  • Published : 2019.04.30


Palladium (Pd) is widely used as a catalyst and noxious gas sensing materials. Especially, various researches of Pd based hydrogen gas sensor have been studied due to the noble property, Pd can be adsorbed hydrogen up to 900 times its own volume. In this study, palladium oxide (PdO) nanostructures were grown on Si substrate ($SiO_2(300nm)/Si$) for 3 to 5 hours at $230^{\circ}C{\sim}440^{\circ}C$ using thermal chemical vapor deposition system. Pd powder (source material) was vaporized at $950^{\circ}C$ and high purity Ar gas (carrier gas) was flown with the 200 sccm. The surface morphology of as-grown PdO nanostructures were characterized by field-emission scanning electron microscopy(FE-SEM). The crystallographic properties were confirmed by Raman spectroscopy. As the results, the as-grown nanostructures exhibit PdO phase. The nano-cube structures of PdO were synthesized at specific substrate temperatures and specific growth duration. Especially, PdO nano-cube structrures were uniformly grown at $370^{\circ}C$ for growth duration of 5 hours. The PdO nano-cube structures are attributed to vapor-liquid-solid process. The nano-cube structures of PdO on graphene nanosheet can be applied to fabricate of high sensitivity hydrogen gas sensor.

팔라듐 (Pd)은 촉매 또는 유해 가스 감지물질로서 널리 활용되고 있다. 특히 자체 부피의 900배까지 수소를 흡착할 수 있는 특성 때문에 수소가스 센서로서의 다양한 연구가 이루어졌다. 본 연구에서는 팔라듐 옥사이드 (PdO) 나노구조물을 실리콘 기판 ($SiO_2(300nm)/Si$) 위에 열화학기상증착 장비를 이용하여 $230^{\circ}C{\sim}440^{\circ}C$ 영역에서 3시간 ~ 5시간 동안 성장시켰다. 원료물질인 Pd 파우더는 $950^{\circ}C$에서 기상화시켰고, 이송가스인 고순도 아르곤 가스를 200 sccm으로 흘려주었다. 성장된 팔라듐 옥사이드 나노구조물의 형상을 전계방출 주사전자현미경으로 조사하였고, 결정학적 특성을 Raman 분광학으로 분석하였다. 그 결과 성장된 나노구조물은 PdO 상을 가지고 있었으며, 특정한 기판 온도와 성장 시간에서 나노큐브 형태의 PdO 나노구조물이 성장되었다. 특히 5시간 동안 성장된 $370^{\circ}C$ 영역에서 균일한 형태의 나노큐브 PdO 나노구조물이 성장되었다. 이러한 PdO 나노큐브는 기상-액상-고상 공정으로 성장된 것으로 판단되며, 그래핀 위에 성장되는 PdO 나노큐브 구조는 고감도 수소가스 감지 센서로 활용될 수 있을 것으로 기대된다.


SHGSCZ_2019_v20n4_458_f0001.png 이미지

Fig. 1. Schematic diagram of thermal CVD system for growth of PdO nanostructures (left) and substrate (SiO2(300 nm)/Si wafer) configuration for various temperatures (right).

SHGSCZ_2019_v20n4_458_f0002.png 이미지

Fig. 2. FE-SEM images of as-grown PdO nanostructures for (a) 3 hours, (b) 4 hours and (c) 5 hours growth duration with various temperatures (230 oC ~ 440 oC). The magnification is 100,000x for all images except (c) 340 oC which is 200,000x.

SHGSCZ_2019_v20n4_458_f0003.png 이미지

Fig. 3. Raman spectra of as-grown PdO nanostructures for (a) 3 hours, (b) 4 hours and (c) 5 hours growth duration with various temperatures (230 oC ~ 440 oC).


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