Fig. 1. Schematic diagram of oxide/metal/oxide multi-layer structure.
Fig. 2. FESEM image of 8 nm Cu(Ni) film depositing onto SnO2 (30 nm) with annealing temperatures at (a) room temperature and (b) 250℃ for 1hr and 8 nm Cu film depositing onto SnO2 (30 nm) with annealing temperatures at (c) room temperature and (d) 250℃ for 1 hr.
Fig. 3. XRD patterns of Cu and Cu(Ni) film at different annealing temperature. (a) Cu and (b) Cu(Ni).
Fig. 4. Grain size and FWHM of (111) peak of Cu and Cu(Ni) films prepared at various annealing temperatures.
Fig. 5. The effect of Cu layer thickness on the (a) transmittance and (c) sheet resistance. The effect of Cu(Ni) layer thickness on the (b) transmittance and (d) sheet resistance.
Fig. 6. The transmittance of SnO2/Cu(Ni)/SnO2 multi-layer structure as a function of annealing temperature. (a) as-dep (b) 200℃, (c) 250℃, and (d) 300℃.
Fig. 7. The sheet resistance of SnO2/Cu(Ni)/SnO2 multi-layer structure as a function of annealing temperature.
Fig. 8. The figure of merit (fom) of SnO2/Cu(Ni)/SnO2 multi-layer structure as a function of annealing temperature.
Table 1. Deposition and annealing parameters.
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