Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Fabrication of the ITO/Mesh-Ag/ITO Transparent Electrode using Ag Nano- Thin Layer with a Mesh Structure and Its Characterization

메쉬 구조의 Ag 나노박막을 이용한 ITO/Mesh-Ag/ITO 고전도성 투명전극 제조 및 특성 분석

  • Lee, Dong Hyun (Department of Electronics Engineering, Gachon University) ;
  • Cho, Eou Sik (Department of Electronics Engineering, Gachon University) ;
  • Kwon, Sang Jik (Department of Electronics Engineering, Gachon University)
  • 이동현 (가천대학교 전자공학과) ;
  • 조의식 (가천대학교 전자공학과) ;
  • 권상직 (가천대학교 전자공학과)
  • Received : 2019.12.09
  • Accepted : 2019.12.16
  • Published : 2019.12.31
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Abstract

The 'ITO/Ag/ITO' multilayers as a highly conductive and transparent electrode, even with the optimum thickness conditions, the transmittances were much lower than those of a single ITO layer on some ranges of the visible wavelength. In order to improve the transmittance, Ag layer was formed with mesh structure. Where, the thickness of the Ag layer was about 10 nm and the space between the Ag lines was varied from 2.9 ㎛ to 19.6 ㎛ with the fixed Ag width of about 1.2 ㎛ in order to vary an open ratio of the Ag mesh structure. The transmittance and sheet resistance in the ITO/Mesh-Ag/ITO multilayer structure were analyzed depending on the open ratio. As a result, a trade off in the open ratio was necessary in order to obtain the transmittance as high as possible and the sheet resistance as possible low. By the open ratio of about 86%, in the ITO/Mesh-Ag/ITO multilayer structure, the transmittance was nearly same as the single ITO layer and the sheet resistance was about 62.3 Ω/.

Keywords

References

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