전자통신동향분석 (Electronics and Telecommunications Trends)

한국전자통신연구원 (Electronics and Telecommunications Research Institute)
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극한 환경용 반도체 기술 동향

Technical Trends of Semiconductors for Harsh Environments

  • 발행 : 2018.12.01
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초록

In this paper, we review the technical trends of diamond and gallium oxide ($Ga_2O_3$) semiconductor technologies among ultra-wide bandgap semiconductor technologies for harsh environments. Diamond exhibits some of the most extreme physical properties such as a wide bandgap, high breakdown field, high electron mobility, and high thermal conductivity, yet its practical use in harsh environments has been limited owing to its scarcity, expense, and small-sized substrate. In addition, the difficulty of n-type doping through ion implantation into diamond is an obstacle to the normally-off operation of transistors. $Ga_2O_3$ also has material properties such as a wide bandgap, high breakdown field, and high working temperature superior to that of silicon, gallium arsenide, gallium nitride, silicon carbide, and so on. In addition, $Ga_2O_3$ bulk crystal growth has developed dramatically. Although the bulk growth is still relatively immature, a 2-inch substrate can already be purchased, whereas 4- and 6-inch substrates are currently under development. Owing to the rapid development of $Ga_2O_3$ bulk and epitaxy growth, device results have quickly followed. We look briefly into diamond and $Ga_2O_3$ semiconductor devices and epitaxy results that can be applied to harsh environments.

키워드

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(그림 1) 기존 반도체 대비 극한 환경용 반도체 물성 및 응용 시스템에 미치는 대한 영향

HJTOCM_2018_v33n6_12_f0002.png 이미지

(그림 2) 다이아몬드 SBD의 다양한 구조들

HJTOCM_2018_v33n6_12_f0003.png 이미지

(그림 3) 다이아몬드 트랜지스터의 다양한 구조들

HJTOCM_2018_v33n6_12_f0004.png 이미지

(그림 4) 다이아몬드 반도체 FET 구조 및 사진

HJTOCM_2018_v33n6_12_f0005.png 이미지

(그림 5) 다이아몬드 반도체 FET의 DC/RF 특성: (a) 다이아몬드 반도체 DC 특성, (b) 다이아몬드 반도체 RF 특성

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(그림 6) 다이아몬드 반도체 FET의 적외선 열화상 비교 사진

HJTOCM_2018_v33n6_12_f0007.png 이미지

(그림 7) 다이아몬드 반도체 FET의 Class A 동작시 1GHz에서 RF 특성

HJTOCM_2018_v33n6_12_f0008.png 이미지

(그림 8) 증가형 산화칼륨 MOSFET 구조도 및 제작 사진: (a) 소자 구조도, (b)finger-type FET 소자, (c)circular-type FET 소자, (d)공정 완료된 β-Ga2O3 조각 웨이퍼)

HJTOCM_2018_v33n6_12_f0009.png 이미지

(그림 9) 증가형 산화갈륨 MOSFET 특성: (a)I-V 특성, (b)항복전압 특성)

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