Acknowledgement
Supported by : National Research Foundation (NRF) of Korea
References
- H. Woo, Y. Jo, J. Kim, C.H. Roh, J.H. Lee, H. Kim, H. Im, C.-K. Hahn, J. Park, Effect of heating on electrical transport in AlGaN/GaN Schottky barrier diodes on Si substrate, Curr. Appl. Phys. 14 (2014) S98-S102. https://doi.org/10.1016/j.cap.2013.11.015
- H. Woo, J. Lee, Y. Jo, J. Han, J. Kim, H. Kim, C.H. Roh, J.H. Lee, J. Park, C.-K. Hahn, H. Im, Barrier lowering and leakage current reduction in Ni-AlGaN/GaN Schottky diodes with an oxygen-treated GaN cap layer, Curr. Appl. Phys. 15 (2015) 1027-1031. https://doi.org/10.1016/j.cap.2015.06.004
- B.N. Pantha, J. Li, J.Y. Lin, H.X. Jiang, Evolution of phase separation in In-rich InGaN alloys, Appl. Phys. Lett. 96 (2010) 232105. https://doi.org/10.1063/1.3453563
-
A. Yamamoto, T.M. Hasan, K. Kodama, S. Shigekawa, M. Kuzuhara, Growth temperature dependent critical thickness for phase separation in thick (
${\sim}1{\mu}m$ )$In_xGa_{1-x}N$ (x=0.2-0.4), J. Cryst. Growth 419 (2015) 64-68. https://doi.org/10.1016/j.jcrysgro.2015.02.100 -
H. Woo, H. Jo, J. Kim, S. Cho, Y. Jo, C.H. Roh, J.H. Lee, Y. Seo, J. Park, H. Kim, C.-K. Hahn, H. Im, Phase separation suppression in
$In_xGa_{1-x}N$ on a Si substrate using an indium modulation technique, Curr. Appl. Phys. 17 (2017) 1142-1147. https://doi.org/10.1016/j.cap.2017.05.003 - Th Kehagias, G.P. Dimitrakopulos, J. Kioseoglou, H. Kirmse, C. Giesen, M. Heuken, A. Georgakilas, W. Neumann, Th Jarakostas, Ph Komninou, Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy, Appl. Phys. Lett. 95 (2009) 071905. https://doi.org/10.1063/1.3204454
- S.Y. Woo, M. Bugnet, H.P.T. Nguyen, Z. Mi, G.A. Botton, Atomic ordering in InGaN alloys within nanowire heterostructures, Nano Lett. 15 (2015) 6413. https://doi.org/10.1021/acs.nanolett.5b01628
- A. Lotsari, A. Das, T. Kehagias, Y. Kotsar, E. Monroy, T. Karakostas, P. Gladkov, P. Komninou, G.P. Dimitrakopulos, Morphology and origin of V-defects in semipolar (11-22) InGaN, J. Cryst. Growth 339 (2012) 1-7. https://doi.org/10.1016/j.jcrysgro.2011.11.055
- C. Bazioti, E. Papadomanolaki, Th Kehagias, T. Walther, J. Smalc-Koziorowska, E. Pavlidou, Ph Komninou, Th Karakostas, E. Iliopoulos, G.P. Dimitrakopulos, Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy, J. Appl. Phys. 118 (2005) 155301.
- S. Chichibu, T. Azuhata, T. Sota, S. Nakamura, Luminescences from localized states in InGaN epilayers, Appl. Phys. Lett. 70 (1997) 2822. https://doi.org/10.1063/1.119013
- A. Chakraborty, A. Bag, P. Mukhopadhyay, S. Ghosh, D. Biswas, Elimination of V-shaped pits in InGaN/GaN/AlN/GaN heterostructure by metal modulation growth technique, Semicond. Sci. Technol. 33 (2018) 035009. https://doi.org/10.1088/1361-6641/aaa7cc
- H. Woo, H. Jo, J. Kim, S. Cho, Y. Jo, C.H. Roh, J.H. Lee, Y. Seo, J. Park, H. Kim, C.-K. Hahn, H. Im, Phase separation suppression in InxGa1−xN on a Si substrate using an indium modulation technique, Curr. Appl. Phys. 17 (2017) 1142-1147. https://doi.org/10.1016/j.cap.2017.05.003
- S. Srinivasan, R. Liu, F. Bertram, F.A. Ponce, S. Tanaka, H. Omiya, Y. Nakagawa, A comparison of Rutherford Backscattering spectroscopy and X‐ray diffraction to determine the composition of thick InGaN epilayers, Phys. Status Solidi (b) 228 (2001) 41-44. https://doi.org/10.1002/1521-3951(200111)228:1<41::AID-PSSB41>3.0.CO;2-N
- T. Kimura, E. Fukumoto, T. Yamaguchi, K. Wang, M. Kaneko, T. Araki, E. Yoon, Y. Nanishi, Investigation of InN mole fraction fluctuation in InGaN films grown by RF-MBE, Phys. Status Solidi (c) 8 (2011) 1499-1502. https://doi.org/10.1002/pssc.201001203
- I.-K. Park, M.-K. Kwon, S.-H. Baek, Y.-W. Ok, T.-Y. Seong, S.-J. Park, Y.-S. Kim, Y.-T. Moon, D.-J. Kim, Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots, Appl. Phys. Lett. 87 (2005) 061906. https://doi.org/10.1063/1.2008365
- Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, S. Fujita, S. Nakamura, Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm, Appl. Phys. Lett. 70 (1997) 981. https://doi.org/10.1063/1.118455
- C.A. Tran, R.F. Karlicek Jr., M. Schurman, A. Osinsky, V. Merai, Y. Li, I. Eliashevich, M.G. Brown, J. Nering, I. Ferguson, R. Stall, Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDs, J. Cryst. Growth 195 (1998) 397-400. https://doi.org/10.1016/S0022-0248(98)00572-7
- S. Nakamura, S.F. Chichibu, Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes, CRC Press, 2000.
- F. Bertram, S. Srinivasan, R. Liu, L. Geng, F.A. Ponce, T. Riemann, J. Christen, S. Tanaka, H. Omiya, Y. Nakagawa, Spatial variation of luminescence of InGaN alloys measured by highly-spatially-resolved scanning cathodoluminescence, Mater. Sci. Eng. B 93 (2002) 19-23. https://doi.org/10.1016/S0921-5107(02)00009-0
- P.R. Edwards, R.W. Martin, K.P. O'Donnell, I.M. Watson, Simultaneous composition mapping and hyperspectral cathodoluminescence imaging of InGaN epilayers, Phys. Status Solidi (c) 0 (2003) 2474-2477.
- J. Bruckbauer, P.R. Edwards, T. Wang, R.W. Martin, High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures, Appl. Phys. Lett. 98 (2011) 141908. https://doi.org/10.1063/1.3575573
- K. Hiramatsu, Y. Kawaguchi, M. Shimisu, N. Sawaki, T. Zheleva, R.F. Davis, H. Tsuda, W. taki, N. Kuwano, K. Oki, The composition pulling effect in MOVPE grown InGaN on GaN and AlGaN and its TEM characterization, MRS Internet J. Nitride Semicond. Res. 2 (1997) 6. https://doi.org/10.1557/S1092578300001320
- Y.-H. Cho, G.H. Gainer, A.J. Fischer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars, "S-shaped" temperature-dependent emission shift and Carrier dynamics in InGaN/GaN multiple quantum wells, Appl. Phys. Lett. 73 (1998) 1370. https://doi.org/10.1063/1.122164
- D. Doppalapudi, S.N. Basu, K.F. Ludwig, T.D. Moustakas, Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy, Appl. Phys. Lett. 84 (1998) 1389.
- P. Mishra, B. Janjua, T.K. Ng, D.H. Anjum, R.T. Elafandy, A. Prabaswara, C. Shen, A. Salhi, A.Y. Alyamani, M.M. El-Desouki, B.S. Ooi, On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy, Opt. Mater. Express 6 (2016) 2052-2062. https://doi.org/10.1364/OME.6.002052
- E.-L. Lai, C.-P. Lin, Y.-H. Lin, T.-H. Hsueh, R.M. Lin, D.-Y. Lyu, Z.-X. Peng, T.-Y. Lin, Origins of efficient green light emission in phase-separated InGaN quantum wells, Nanotechnology 17 (2006) 3734-3739. https://doi.org/10.1088/0957-4484/17/15/020
- F.B. Nranjo, S. Fernandez, M.A. Sanchez-Gracia, F. Calle, E. Calleja, A. Trampert, K.H. Ploog, Structural and optical characterization of thick InGaN layers and InGaN/GaN MQW grown by molecular beam epitaxy, Mater. Sci. Eng. (b) 93 (2002) 131-134. https://doi.org/10.1016/S0921-5107(02)00032-6
- Y.P. Varshni, Temperature dependence of the energy gap in semiconductors, Physica 34 (1967) 149. https://doi.org/10.1016/0031-8914(67)90062-6
- Y.S. Park, C.M. Park, D.J. Fu, T.W. Kang, J.E. Oh, Photoluminescence studies of GaN nanorods on Si (111) substrates grown by molecular-beam epitaxy, Appl. Phys. Lett. 85 (2004) 5718. https://doi.org/10.1063/1.1832739
- M. Moseley, B. Gunning, J. Greenlee, J. Lowder, G. Namkoong, W.A. Doolittle, Observation and control of the surface kinetics of InGaN for the elimination of phase separation, J. Appl. Phys. 112 (2012) 014909. https://doi.org/10.1063/1.4733347
Cited by
- Solving the problem of gallium contamination problem in InAlN layers in close coupled showerhead reactors vol.12, pp.4, 2018, https://doi.org/10.7567/1882-0786/ab0bbb
- Suppression of V-pits formation in InGaN layer by stepped growth with annealing interval vol.28, pp.None, 2018, https://doi.org/10.1016/j.surfin.2021.101691