Journal of the Korean Physical Society

  • 제73권12호
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  • Pages.1895-1898
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  • 2018
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  • 0374-4884(pISSN)
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  • 1976-8524(eISSN)
한국물리학회 (Korean Physical Society)
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Investigation of X-ray-induced Defects on Metals and Silicon by Using Coincidence Doppler Broadening Positron Annihilation Spectroscopy

  • Lee, C.Y. (Department of Physics, Hannam University)
  • 투고 : 2018.10.16
  • 심사 : 2018.10.30
  • 발행 : 2018.12.30
⟨ 이전 논문 다음 논문 ⟩

초록

The mechanical properties of Al, Ti, Fe, and Cu metals p-type Si, and n-type Si were investigated by using coincidence Doppler broadening (CDB) positron annihilation spectroscopy. The samples in this experiment were irradiated by using X-rays at generating powers for up to 9 kW. The data taken after the irradiation showed all the characteristic features predicted from defects with vacancies. The S parameter values of the metals were generally less than those of semiconductors such as p-type Si and n-type Si. The relationship between n-type Si and p-type Si were more affected when n-type Si rather than p-type Si was irradiated with X-rays.

키워드

과제정보

연구 과제 주관 기관 : Hannam University

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